TY - JOUR
T1 - Damage-free cleaning of Si(001) using glancing-angle ion bombardment
AU - Labanda, Jose Gregorio C.
AU - Barnett, Scott A.
AU - Hultman, L.
PY - 1998
Y1 - 1998
N2 - The effects of glancing-angle argon ion bombardment on air-contaminated Si(001) surfaces were studied. Bombarding at substrate temperature Ts = 730°C, impingement angle φ = 3-15° relative to the surface plane, ion energy E = 1 keV and dose D = 3 × 1015 ions cm-2 gave high-quality reflection high energy electron diffraction (RHEED) patterns and contaminant-free surfaces as observed by ion scattering spectroscopy. Atomic force microscopy images showed roughness value ≤0.5 nm under these conditions, but the roughness increased and RHEED patterns became spotty for higher doses or energies. Secco etching of samples bombarded at Ts = 730°C showed etch pits with a density of 106-107 cm-2 that increased with increasing D and E. Room-temperature bombardment with E = 1 keV, D = 3 × 1015 ions cm-2 and φ = 3 °, followed by a 730°C anneal, yielded a lowest roughness value of 0.2 nm. Secco etching showed no resolvable pits, indicating a dislocation density <4×104 cm-2.
AB - The effects of glancing-angle argon ion bombardment on air-contaminated Si(001) surfaces were studied. Bombarding at substrate temperature Ts = 730°C, impingement angle φ = 3-15° relative to the surface plane, ion energy E = 1 keV and dose D = 3 × 1015 ions cm-2 gave high-quality reflection high energy electron diffraction (RHEED) patterns and contaminant-free surfaces as observed by ion scattering spectroscopy. Atomic force microscopy images showed roughness value ≤0.5 nm under these conditions, but the roughness increased and RHEED patterns became spotty for higher doses or energies. Secco etching of samples bombarded at Ts = 730°C showed etch pits with a density of 106-107 cm-2 that increased with increasing D and E. Room-temperature bombardment with E = 1 keV, D = 3 × 1015 ions cm-2 and φ = 3 °, followed by a 730°C anneal, yielded a lowest roughness value of 0.2 nm. Secco etching showed no resolvable pits, indicating a dislocation density <4×104 cm-2.
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U2 - 10.1116/1.590102
DO - 10.1116/1.590102
M3 - Article
AN - SCOPUS:11644299655
SN - 1071-1023
VL - 16
SP - 1885
EP - 1890
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 4
ER -