Damage-free cleaning of Si(001) using glancing-angle ion bombardment

Jose Gregorio C. Labanda*, Scott A. Barnett, L. Hultman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The effects of glancing-angle argon ion bombardment on air-contaminated Si(001) surfaces were studied. Bombarding at substrate temperature Ts = 730°C, impingement angle φ = 3-15° relative to the surface plane, ion energy E = 1 keV and dose D = 3 × 1015 ions cm-2 gave high-quality reflection high energy electron diffraction (RHEED) patterns and contaminant-free surfaces as observed by ion scattering spectroscopy. Atomic force microscopy images showed roughness value ≤0.5 nm under these conditions, but the roughness increased and RHEED patterns became spotty for higher doses or energies. Secco etching of samples bombarded at Ts = 730°C showed etch pits with a density of 106-107 cm-2 that increased with increasing D and E. Room-temperature bombardment with E = 1 keV, D = 3 × 1015 ions cm-2 and φ = 3 °, followed by a 730°C anneal, yielded a lowest roughness value of 0.2 nm. Secco etching showed no resolvable pits, indicating a dislocation density <4×104 cm-2.

Original languageEnglish (US)
Pages (from-to)1885-1890
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number4
DOIs
StatePublished - 1998

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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