The effects of glancing-angle argon ion bombardment on air-contaminated Si(001) surfaces were studied. Bombarding at substrate temperature Ts = 730°C, impingement angle φ = 3-15° relative to the surface plane, ion energy E = 1 keV and dose D = 3 × 1015 ions cm-2 gave high-quality reflection high energy electron diffraction (RHEED) patterns and contaminant-free surfaces as observed by ion scattering spectroscopy. Atomic force microscopy images showed roughness value ≤0.5 nm under these conditions, but the roughness increased and RHEED patterns became spotty for higher doses or energies. Secco etching of samples bombarded at Ts = 730°C showed etch pits with a density of 106-107 cm-2 that increased with increasing D and E. Room-temperature bombardment with E = 1 keV, D = 3 × 1015 ions cm-2 and φ = 3 °, followed by a 730°C anneal, yielded a lowest roughness value of 0.2 nm. Secco etching showed no resolvable pits, indicating a dislocation density <4×104 cm-2.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1998|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering