DC and RF measurements of superconducting-ferromagnetic multi-terminal devices

G. V. Prokopenko; O. A. Mukhanov; I. P. Nevirkovets; O. Chernyashevskyy; J. B. Ketterson

doi:10.1109/ISEC.2013.6604301

DC and RF measurements of superconducting-ferromagnetic multi-terminal devices

G. V. Prokopenko, O. A. Mukhanov, I. P. Nevirkovets, O. Chernyashevskyy, J. B. Ketterson

Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We report experimental results of the DC and RF characterization of multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlO_x), and a ferromagnetic material (Ni), respectively), which display transistor-like properties. Applying a 0.2 MHz signal in addition to a constant DC bias current to the injector (SFIFS) junction, we observe a voltage gain of ∼1.25 on the acceptor SIS junction, if operation point of the SIS junction is chosen in the sub-gap region of its current-voltage characteristic. We also observed a good input-output isolation of our SFIFSIS devices of the order of 30 dBV. The experiments indicate that, after optimization of the geometry and improvement of junction quality, these devices can be used as input-output isolators and amplifiers for memory, digital and RF applications.

Original language	English (US)
Title of host publication	2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013
DOIs	https://doi.org/10.1109/ISEC.2013.6604301
State	Published - Oct 15 2013
Event	2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013 - Cambridge, MA, United States Duration: Jul 7 2013 → Jul 11 2013

Other

Other	2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013
Country/Territory	United States
City	Cambridge, MA
Period	7/7/13 → 7/11/13

Keywords

Josephson effect
ferromagnetism
quasiparticle injection
superconducting transistor
superconductivity

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/ISEC.2013.6604301

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@inproceedings{c70011c5d0d741e5962a28cea205e714,

title = "DC and RF measurements of superconducting-ferromagnetic multi-terminal devices",

abstract = "We report experimental results of the DC and RF characterization of multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively), which display transistor-like properties. Applying a 0.2 MHz signal in addition to a constant DC bias current to the injector (SFIFS) junction, we observe a voltage gain of ∼1.25 on the acceptor SIS junction, if operation point of the SIS junction is chosen in the sub-gap region of its current-voltage characteristic. We also observed a good input-output isolation of our SFIFSIS devices of the order of 30 dBV. The experiments indicate that, after optimization of the geometry and improvement of junction quality, these devices can be used as input-output isolators and amplifiers for memory, digital and RF applications.",

keywords = "Josephson effect, ferromagnetism, quasiparticle injection, superconducting transistor, superconductivity",

author = "Prokopenko, {G. V.} and Mukhanov, {O. A.} and Nevirkovets, {I. P.} and O. Chernyashevskyy and Ketterson, {J. B.}",

year = "2013",

month = oct,

day = "15",

doi = "10.1109/ISEC.2013.6604301",

language = "English (US)",

isbn = "9781467363716",

booktitle = "2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013",

note = "2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013 ; Conference date: 07-07-2013 Through 11-07-2013",

}

Prokopenko, GV, Mukhanov, OA, Nevirkovets, IP, Chernyashevskyy, O & Ketterson, JB 2013, DC and RF measurements of superconducting-ferromagnetic multi-terminal devices. in 2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013., 6604301, 2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013, Cambridge, MA, United States, 7/7/13. https://doi.org/10.1109/ISEC.2013.6604301

TY - GEN

T1 - DC and RF measurements of superconducting-ferromagnetic multi-terminal devices

AU - Prokopenko, G. V.

AU - Mukhanov, O. A.

AU - Nevirkovets, I. P.

AU - Chernyashevskyy, O.

AU - Ketterson, J. B.

PY - 2013/10/15

Y1 - 2013/10/15

N2 - We report experimental results of the DC and RF characterization of multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively), which display transistor-like properties. Applying a 0.2 MHz signal in addition to a constant DC bias current to the injector (SFIFS) junction, we observe a voltage gain of ∼1.25 on the acceptor SIS junction, if operation point of the SIS junction is chosen in the sub-gap region of its current-voltage characteristic. We also observed a good input-output isolation of our SFIFSIS devices of the order of 30 dBV. The experiments indicate that, after optimization of the geometry and improvement of junction quality, these devices can be used as input-output isolators and amplifiers for memory, digital and RF applications.

AB - We report experimental results of the DC and RF characterization of multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively), which display transistor-like properties. Applying a 0.2 MHz signal in addition to a constant DC bias current to the injector (SFIFS) junction, we observe a voltage gain of ∼1.25 on the acceptor SIS junction, if operation point of the SIS junction is chosen in the sub-gap region of its current-voltage characteristic. We also observed a good input-output isolation of our SFIFSIS devices of the order of 30 dBV. The experiments indicate that, after optimization of the geometry and improvement of junction quality, these devices can be used as input-output isolators and amplifiers for memory, digital and RF applications.

KW - Josephson effect

KW - ferromagnetism

KW - quasiparticle injection

KW - superconducting transistor

KW - superconductivity

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U2 - 10.1109/ISEC.2013.6604301

DO - 10.1109/ISEC.2013.6604301

M3 - Conference contribution

AN - SCOPUS:84885191827

SN - 9781467363716

BT - 2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013

T2 - 2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013

Y2 - 7 July 2013 through 11 July 2013

ER -

DC and RF measurements of superconducting-ferromagnetic multi-terminal devices

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Keywords

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