DC and RF measurements of superconducting-ferromagnetic multi-terminal devices

G. V. Prokopenko, O. A. Mukhanov, I. P. Nevirkovets, O. Chernyashevskyy, J. B. Ketterson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We report experimental results of the DC and RF characterization of multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively), which display transistor-like properties. Applying a 0.2 MHz signal in addition to a constant DC bias current to the injector (SFIFS) junction, we observe a voltage gain of ∼1.25 on the acceptor SIS junction, if operation point of the SIS junction is chosen in the sub-gap region of its current-voltage characteristic. We also observed a good input-output isolation of our SFIFSIS devices of the order of 30 dBV. The experiments indicate that, after optimization of the geometry and improvement of junction quality, these devices can be used as input-output isolators and amplifiers for memory, digital and RF applications.

Original languageEnglish (US)
Title of host publication2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013
DOIs
StatePublished - Oct 15 2013
Event2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013 - Cambridge, MA, United States
Duration: Jul 7 2013Jul 11 2013

Other

Other2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013
CountryUnited States
CityCambridge, MA
Period7/7/137/11/13

Keywords

  • Josephson effect
  • ferromagnetism
  • quasiparticle injection
  • superconducting transistor
  • superconductivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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