TY - GEN
T1 - DC and RF measurements of superconducting-ferromagnetic multi-terminal devices
AU - Prokopenko, G. V.
AU - Mukhanov, O. A.
AU - Nevirkovets, I. P.
AU - Chernyashevskyy, O.
AU - Ketterson, J. B.
PY - 2013
Y1 - 2013
N2 - We report experimental results of the DC and RF characterization of multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively), which display transistor-like properties. Applying a 0.2 MHz signal in addition to a constant DC bias current to the injector (SFIFS) junction, we observe a voltage gain of ∼1.25 on the acceptor SIS junction, if operation point of the SIS junction is chosen in the sub-gap region of its current-voltage characteristic. We also observed a good input-output isolation of our SFIFSIS devices of the order of 30 dBV. The experiments indicate that, after optimization of the geometry and improvement of junction quality, these devices can be used as input-output isolators and amplifiers for memory, digital and RF applications.
AB - We report experimental results of the DC and RF characterization of multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively), which display transistor-like properties. Applying a 0.2 MHz signal in addition to a constant DC bias current to the injector (SFIFS) junction, we observe a voltage gain of ∼1.25 on the acceptor SIS junction, if operation point of the SIS junction is chosen in the sub-gap region of its current-voltage characteristic. We also observed a good input-output isolation of our SFIFSIS devices of the order of 30 dBV. The experiments indicate that, after optimization of the geometry and improvement of junction quality, these devices can be used as input-output isolators and amplifiers for memory, digital and RF applications.
KW - Josephson effect
KW - ferromagnetism
KW - quasiparticle injection
KW - superconducting transistor
KW - superconductivity
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U2 - 10.1109/ISEC.2013.6604301
DO - 10.1109/ISEC.2013.6604301
M3 - Conference contribution
AN - SCOPUS:84885191827
SN - 9781467363716
T3 - 2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013
BT - 2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013
T2 - 2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013
Y2 - 7 July 2013 through 11 July 2013
ER -