de Haas-van Alphen measurements and phase shift analysis of electronic scattering anisotropy in solid solutions of Ga in Au

D. H. Dye*, J. B. Ketterson, D. H. Lowndes, G. W. Crabtree, L. R. Windmiller

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Measurements of the electronic scattering anisotropy due to dilute concentrations of gallium in gold have been carried out using the de Haas-van Alphen effect. These measurements have been analyzed using the partial wave approach, and the results have been compared with those for other noble metal-heterovalent impurity systems. Gallium, which has a valence difference of 2 with respect to gold, exhibits a much smaller change in lattice constant upon alloying than any of the other noble metal-heterovalent impurity systems studied to date. The results reported here indicate that the Friedel phase shifts for solid solutions of Ga in Au are considerably different from those for the other systems, in which impurity-induced strain is expected to play a larger role. The phase shifts for solid solutions of Ga in Au indicate that the Coulomb potential is effectively screened within a relatively short distance from the impurity site.

Original languageEnglish (US)
Pages (from-to)945-951
Number of pages7
JournalJournal of Low Temperature Physics
Volume26
Issue number5-6
DOIs
StatePublished - Mar 1 1977

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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