Deep acceptors in undoped GaN

M. A. Reshchikov*, F. Shahedipour, R. Y. Korotkov, M. P. Ulmer, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalConference article

21 Scopus citations

Abstract

Broad photoluminescence bands with maxima at 2.2, 2.5 and 2.9 eV in undoped GaN are studied. The bands are related to three deep acceptors, which are characterized by strong electron-phonon coupling. Vibrational properties of the defects are reported.

Original languageEnglish (US)
Pages (from-to)105-108
Number of pages4
JournalPhysica B: Condensed Matter
Volume273-274
DOIs
StatePublished - Dec 15 1999
EventProceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA
Duration: Jul 26 1999Jul 30 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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