Abstract
Broad photoluminescence bands with maxima at 2.2, 2.5 and 2.9 eV in undoped GaN are studied. The bands are related to three deep acceptors, which are characterized by strong electron-phonon coupling. Vibrational properties of the defects are reported.
Original language | English (US) |
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Pages (from-to) | 105-108 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 273-274 |
DOIs | |
State | Published - Dec 15 1999 |
Event | Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: Jul 26 1999 → Jul 30 1999 |
Funding
This work was supported by the NSF under grant ECS-9705134 and NASA under contract NAG5-8730.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering