Deep donor-acceptor pair luminescence in codoped GaN

Bing Han; Joel M. Gregie; Melville P. Ulmer; Bruce W. Wessels

doi:10.1557/proc-743-l5.8

Deep donor-acceptor pair luminescence in codoped GaN

Bing Han^*, Joel M. Gregie, Melville P. Ulmer, Bruce W. Wessels

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Deep level defects formed in p-type GaN:Mg codoped with shallow donors have been investigated by photoluminescence (PL) spectroscopy. A donor-acceptor pair (DAP) luminescence band peaked at 2.45 eV dominates the room temperature PL spectrum in heavily codoped epilayers. A superlinear dependence of PL intensity on excitation density is observed for this band, with an exponent of 1.4∼1.7. The intensity of this band increases with increasing temperature with a maximum at 264K. To explain the luminescence behavior a DAP model was developed whereby the recombination involves a deep donor and shallow Mg acceptor. The deep donor is tentatively attributed to a DX center.

Original language	English (US)
Pages (from-to)	355-360
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	743
DOIs	https://doi.org/10.1557/proc-743-l5.8
State	Published - 2002
Event	Gan and Related Alloys - 2002 - Boston, MA, United States Duration: Dec 2 2002 → Dec 6 2002

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{851f07d584c04eb09fdcb783efd3aa3a,

title = "Deep donor-acceptor pair luminescence in codoped GaN",

abstract = "Deep level defects formed in p-type GaN:Mg codoped with shallow donors have been investigated by photoluminescence (PL) spectroscopy. A donor-acceptor pair (DAP) luminescence band peaked at 2.45 eV dominates the room temperature PL spectrum in heavily codoped epilayers. A superlinear dependence of PL intensity on excitation density is observed for this band, with an exponent of 1.4∼1.7. The intensity of this band increases with increasing temperature with a maximum at 264K. To explain the luminescence behavior a DAP model was developed whereby the recombination involves a deep donor and shallow Mg acceptor. The deep donor is tentatively attributed to a DX center.",

author = "Bing Han and Gregie, {Joel M.} and Ulmer, {Melville P.} and Wessels, {Bruce W.}",

year = "2002",

doi = "10.1557/proc-743-l5.8",

language = "English (US)",

volume = "743",

pages = "355--360",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Gan and Related Alloys - 2002 ; Conference date: 02-12-2002 Through 06-12-2002",

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TY - JOUR

T1 - Deep donor-acceptor pair luminescence in codoped GaN

AU - Han, Bing

AU - Gregie, Joel M.

AU - Ulmer, Melville P.

AU - Wessels, Bruce W.

PY - 2002

Y1 - 2002

N2 - Deep level defects formed in p-type GaN:Mg codoped with shallow donors have been investigated by photoluminescence (PL) spectroscopy. A donor-acceptor pair (DAP) luminescence band peaked at 2.45 eV dominates the room temperature PL spectrum in heavily codoped epilayers. A superlinear dependence of PL intensity on excitation density is observed for this band, with an exponent of 1.4∼1.7. The intensity of this band increases with increasing temperature with a maximum at 264K. To explain the luminescence behavior a DAP model was developed whereby the recombination involves a deep donor and shallow Mg acceptor. The deep donor is tentatively attributed to a DX center.

AB - Deep level defects formed in p-type GaN:Mg codoped with shallow donors have been investigated by photoluminescence (PL) spectroscopy. A donor-acceptor pair (DAP) luminescence band peaked at 2.45 eV dominates the room temperature PL spectrum in heavily codoped epilayers. A superlinear dependence of PL intensity on excitation density is observed for this band, with an exponent of 1.4∼1.7. The intensity of this band increases with increasing temperature with a maximum at 264K. To explain the luminescence behavior a DAP model was developed whereby the recombination involves a deep donor and shallow Mg acceptor. The deep donor is tentatively attributed to a DX center.

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DO - 10.1557/proc-743-l5.8

M3 - Conference article

AN - SCOPUS:0038710520

VL - 743

SP - 355

EP - 360

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Gan and Related Alloys - 2002

Y2 - 2 December 2002 through 6 December 2002

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