Abstract
Deep level defects formed in p-type GaN:Mg codoped with shallow donors have been investigated by photoluminescence (PL) spectroscopy. A donor-acceptor pair (DAP) luminescence band peaked at 2.45 eV dominates the room temperature PL spectrum in heavily codoped epilayers. A superlinear dependence of PL intensity on excitation density is observed for this band, with an exponent of 1.4∼1.7. The intensity of this band increases with increasing temperature with a maximum at 264K. To explain the luminescence behavior a DAP model was developed whereby the recombination involves a deep donor and shallow Mg acceptor. The deep donor is tentatively attributed to a DX center.
Original language | English (US) |
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Pages (from-to) | 355-360 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 743 |
DOIs | |
State | Published - 2002 |
Event | Gan and Related Alloys - 2002 - Boston, MA, United States Duration: Dec 2 2002 → Dec 6 2002 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering