Deep donor-acceptor pair luminescence in codoped GaN

Bing Han*, Joel M. Gregie, Melville P. Ulmer, Bruce W. Wessels

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


Deep level defects formed in p-type GaN:Mg codoped with shallow donors have been investigated by photoluminescence (PL) spectroscopy. A donor-acceptor pair (DAP) luminescence band peaked at 2.45 eV dominates the room temperature PL spectrum in heavily codoped epilayers. A superlinear dependence of PL intensity on excitation density is observed for this band, with an exponent of 1.4∼1.7. The intensity of this band increases with increasing temperature with a maximum at 264K. To explain the luminescence behavior a DAP model was developed whereby the recombination involves a deep donor and shallow Mg acceptor. The deep donor is tentatively attributed to a DX center.

Original languageEnglish (US)
Pages (from-to)355-360
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2002
EventGan and Related Alloys - 2002 - Boston, MA, United States
Duration: Dec 2 2002Dec 6 2002

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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