Deep Fe and intrinsic defect levels in Ga0.47In 0.53As/InP

K. H. Goetz*, D. Bimberg, K. A. Brauchle, H. Juergensen, J. Selders, M. Razeghi, E. Kuphal

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Two deep traps in Ga0.47In0.53As/InP:Fe at a depth of 110 meV and 150 meV, respectively, are observed for the first time using low-temperature photoluminescence and deep level transient spectroscopy. The dependence of luminescence intensity on the growth process itself (liquid phase epitaxy, vapor phase epitaxy, and metalorganic chemical vapor deposition) and its parameters (growth temperature, layer thickness) and the substrate doping is reported and leads to the unambigous identification of the 150-meV acceptorlike trap as being caused by Fe impurities. Fe diffuses from the substrate to the epitaxial layer during the growth process. This outdiffusion is less pronounced for layers grown at lower temperature. The level at 110 meV which is also observed in layers grown on InP:S substrate is tentatively assigned to an intrinsic defect of Ga0.47In0.53As.

Original languageEnglish (US)
Pages (from-to)277-279
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number3
DOIs
StatePublished - 1985

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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