Deep fin-like AlGaAs nanostructure fabrications by CAIBE

Shengli Wu*, Lijun Wang, R. C. Tiberio, Seng Tiong Ho

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


We show that very narrow fin-like periodic nanostructure with 0.1 μm width, 1 μm depth, and a few microns length can be fabricated on AlGaAs using Chemically-Assited-Ion-Beam-Etching with oxidized AlGaAs as negative mask. This technique may have applications to nanoscale devices fabrication.

Original languageEnglish (US)
Pages (from-to)59-62
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1998
EventProceedings of the 1998 Conference on Integrated Optoelectronics II - Beijing, China
Duration: Sep 18 1998Sep 19 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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