Deep fin-like AlGaAs nanostructure fabrications by CAIBE

Shengli Wu; Lijun Wang; R. C. Tiberio; Seng Tiong Ho

Deep fin-like AlGaAs nanostructure fabrications by CAIBE

Shengli Wu^*, Lijun Wang, R. C. Tiberio, Seng Tiong Ho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We show that very narrow fin-like periodic nanostructure with 0.1 μm width, 1 μm depth, and a few microns length can be fabricated on AlGaAs using Chemically-Assited-Ion-Beam-Etching with oxidized AlGaAs as negative mask. This technique may have applications to nanoscale devices fabrication.

Original language	English (US)
Pages (from-to)	59-62
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3551
State	Published - Dec 1 1998
Event	Proceedings of the 1998 Conference on Integrated Optoelectronics II - Beijing, China Duration: Sep 18 1998 → Sep 19 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

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title = "Deep fin-like AlGaAs nanostructure fabrications by CAIBE",

abstract = "We show that very narrow fin-like periodic nanostructure with 0.1 μm width, 1 μm depth, and a few microns length can be fabricated on AlGaAs using Chemically-Assited-Ion-Beam-Etching with oxidized AlGaAs as negative mask. This technique may have applications to nanoscale devices fabrication.",

author = "Shengli Wu and Lijun Wang and Tiberio, {R. C.} and Ho, {Seng Tiong}",

year = "1998",

month = dec,

day = "1",

language = "English (US)",

volume = "3551",

pages = "59--62",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1998 Conference on Integrated Optoelectronics II ; Conference date: 18-09-1998 Through 19-09-1998",

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TY - JOUR

T1 - Deep fin-like AlGaAs nanostructure fabrications by CAIBE

AU - Wu, Shengli

AU - Wang, Lijun

AU - Tiberio, R. C.

AU - Ho, Seng Tiong

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We show that very narrow fin-like periodic nanostructure with 0.1 μm width, 1 μm depth, and a few microns length can be fabricated on AlGaAs using Chemically-Assited-Ion-Beam-Etching with oxidized AlGaAs as negative mask. This technique may have applications to nanoscale devices fabrication.

AB - We show that very narrow fin-like periodic nanostructure with 0.1 μm width, 1 μm depth, and a few microns length can be fabricated on AlGaAs using Chemically-Assited-Ion-Beam-Etching with oxidized AlGaAs as negative mask. This technique may have applications to nanoscale devices fabrication.

UR - http://www.scopus.com/inward/record.url?scp=0032288723&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032288723&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032288723

SN - 0277-786X

VL - 3551

SP - 59

EP - 62

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1998 Conference on Integrated Optoelectronics II

Y2 - 18 September 1998 through 19 September 1998

ER -

Deep fin-like AlGaAs nanostructure fabrications by CAIBE

Abstract

ASJC Scopus subject areas

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