Properties of deep level defects in heteroepitaxially grown ZnSe have been investigated using transient capacitance spectroscopy. A total of five electron traps were observed with activation energies of 0.33, 0.35, 0.42, 0.71 and 0.86 eV in Au/ZnSe Schottky diodes. Trap concentrations ranged from 1012 to 1014cm−3.
- Schottky-barrier devices
ASJC Scopus subject areas
- Electrical and Electronic Engineering