Abstract
Properties of deep level defects in heteroepitaxially grown ZnSe have been investigated using transient capacitance spectroscopy. A total of five electron traps were observed with activation energies of 0.33, 0.35, 0.42, 0.71 and 0.86 eV in Au/ZnSe Schottky diodes. Trap concentrations ranged from 1012 to 1014cm−3.
Original language | English (US) |
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Pages (from-to) | 794-795 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 16 |
Issue number | 21 |
DOIs | |
State | Published - Oct 9 1980 |
Keywords
- D.L.T.S
- Schottky-barrier devices
- Traps
ASJC Scopus subject areas
- Electrical and Electronic Engineering