Deep level defects in Au/ZnSe schottky diodes

P. Besomi, B. W. Wessels

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Properties of deep level defects in heteroepitaxially grown ZnSe have been investigated using transient capacitance spectroscopy. A total of five electron traps were observed with activation energies of 0.33, 0.35, 0.42, 0.71 and 0.86 eV in Au/ZnSe Schottky diodes. Trap concentrations ranged from 1012 to 1014cm−3.

Original languageEnglish (US)
Pages (from-to)794-795
Number of pages2
JournalElectronics Letters
Volume16
Issue number21
DOIs
StatePublished - Oct 9 1980

Keywords

  • D.L.T.S
  • Schottky-barrier devices
  • Traps

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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