Deep level defects in CdS/GaAs heterojunctions

Paul Besomi*, Bruce W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Deep level defects in epitaxially grown CdS/GaAs heterojunctions were investigated using transient capacitance spectroscopy. Five different electron and hole traps were observed in the heterojunctions with activation energies of 0.31, 0.47, 0.69, and 0.16 and 0.32 eV respectively. The emission rate, capture cross section and concentration of these traps are reported in this paper. Trap concentrations ranged from 1012 to 1015 cm-3 depending on the heterojunction fabrication procedure.

Original languageEnglish (US)
Pages (from-to)33-39
Number of pages7
JournalThin Solid Films
Volume71
Issue number1
DOIs
StatePublished - Jan 1 1980

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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