Deep level defects in CdS/GaAs heterojunctions

Paul Besomi; Bruce W. Wessels

doi:10.1016/0040-6090(80)90180-7

Deep level defects in CdS/GaAs heterojunctions

Paul Besomi^*, Bruce W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Deep level defects in epitaxially grown CdS/GaAs heterojunctions were investigated using transient capacitance spectroscopy. Five different electron and hole traps were observed in the heterojunctions with activation energies of 0.31, 0.47, 0.69, and 0.16 and 0.32 eV respectively. The emission rate, capture cross section and concentration of these traps are reported in this paper. Trap concentrations ranged from 10¹² to 10¹⁵ cm^-3 depending on the heterojunction fabrication procedure.

Original language	English (US)
Pages (from-to)	33-39
Number of pages	7
Journal	Thin Solid Films
Volume	71
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(80)90180-7
State	Published - 1980

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(80)90180-7

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title = "Deep level defects in CdS/GaAs heterojunctions",

abstract = "Deep level defects in epitaxially grown CdS/GaAs heterojunctions were investigated using transient capacitance spectroscopy. Five different electron and hole traps were observed in the heterojunctions with activation energies of 0.31, 0.47, 0.69, and 0.16 and 0.32 eV respectively. The emission rate, capture cross section and concentration of these traps are reported in this paper. Trap concentrations ranged from 1012 to 1015 cm-3 depending on the heterojunction fabrication procedure.",

author = "Paul Besomi and Wessels, {Bruce W.}",

note = "Funding Information: The fellowship support of the Walter P. Murphy Fund is gratefully acknowledged. The National Science Foundation-Materials Research Laboratory program through the Materials Research Center, Northwestern University (Grant DMR 76-80847), provided materials and equipment support,",

year = "1980",

doi = "10.1016/0040-6090(80)90180-7",

language = "English (US)",

volume = "71",

pages = "33--39",

journal = "Thin Solid Films",

issn = "0040-6090",

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T1 - Deep level defects in CdS/GaAs heterojunctions

AU - Besomi, Paul

AU - Wessels, Bruce W.

N1 - Funding Information: The fellowship support of the Walter P. Murphy Fund is gratefully acknowledged. The National Science Foundation-Materials Research Laboratory program through the Materials Research Center, Northwestern University (Grant DMR 76-80847), provided materials and equipment support,

PY - 1980

Y1 - 1980

N2 - Deep level defects in epitaxially grown CdS/GaAs heterojunctions were investigated using transient capacitance spectroscopy. Five different electron and hole traps were observed in the heterojunctions with activation energies of 0.31, 0.47, 0.69, and 0.16 and 0.32 eV respectively. The emission rate, capture cross section and concentration of these traps are reported in this paper. Trap concentrations ranged from 1012 to 1015 cm-3 depending on the heterojunction fabrication procedure.

AB - Deep level defects in epitaxially grown CdS/GaAs heterojunctions were investigated using transient capacitance spectroscopy. Five different electron and hole traps were observed in the heterojunctions with activation energies of 0.31, 0.47, 0.69, and 0.16 and 0.32 eV respectively. The emission rate, capture cross section and concentration of these traps are reported in this paper. Trap concentrations ranged from 1012 to 1015 cm-3 depending on the heterojunction fabrication procedure.

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U2 - 10.1016/0040-6090(80)90180-7

DO - 10.1016/0040-6090(80)90180-7

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SP - 33

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Deep level defects in CdS/GaAs heterojunctions

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