Deep level defects in heteroepitaxial zinc selenide

Paul Besomi*, Bruce W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


Deep level defects in epitaxially grown high-conductivity zinc selenide were investigated using transient capacitance spectroscopy. A total of seven electron traps was observed in Au/ZnSe Schottky diodes and ZnSe/GaAs n-p heterojunctions, having activation energies of 0.24, 0.33, 0.35, 0.42, 0.54, 0.71, and 0.86 eV, respectively. The emission rate, capture cross-section prefactor, and concentration of each trap are reported in this paper. Trap concentrations ranged from 1011 to 1014 cm-3 depending upon the epitaxial growth conditions. A defect model involving selenium vacancies and divacancies as well as deep donor impurities satisfactorily describes the variation of electron trap concentration with zinc/selenium ratio in the vapor phase.

Original languageEnglish (US)
Pages (from-to)3076-3084
Number of pages9
JournalJournal of Applied Physics
Issue number4
StatePublished - 1982

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Deep level defects in heteroepitaxial zinc selenide'. Together they form a unique fingerprint.

Cite this