Deep level defects in Mg-doped GaN

Gyu Chul Yi*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations


Deep level defects in Mg compensated GaN grown by metal-organic vapor phase epitaxy were investigated using photocapacitance spectroscopy measurements on Schottky barrier diodes. Addition of magnesium resulted in the formation of a series of deep centers with optical threshold energies of 1.0, 1.2, 1.8, and 3.1 eV. Upon annealing the epitaxial GaN in nitrogen at 850 °C the mid-gap levels disappeared and only the trapping level at 3.1 eV remained. The mid-gap levels are ascribed to Mg dopant complexes which may in part be responsible for low doping efficiency of Mg in the as-grown, doped GaN. The deep level at 3.1 eV commonly observed from all Mg-doped GaN most likely involves the Mg acceptor. The photo-excited state of the 3.1 eV level had relaxation times of the order of 103 sec at 295 K.

Original languageEnglish (US)
Pages (from-to)525-530
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Dec 1 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Deep level defects in Mg-doped GaN'. Together they form a unique fingerprint.

Cite this