Skip to main navigation
Skip to search
Skip to main content
Northwestern Scholars Home
Help & FAQ
Home
Experts
Organizations
Research Output
Grants
Core Facilities
Research Data
Search by expertise, name or affiliation
Deep level defects in n-type GaN compensated with Mg
Gyu Chul Yi
*
, Bruce W. Wessels
*
Corresponding author for this work
MRC - Materials Research Center
Research output
:
Contribution to journal
›
Article
›
peer-review
71
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Deep level defects in n-type GaN compensated with Mg'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Magnesium
100%
Doped GaN
100%
N-type GaN
100%
Deep Level Defects
100%
Midgap
100%
Atmospheric Pressure
50%
Annealing
50%
GaN Films
50%
Epitaxial GaN
50%
Metal Organic Vapor Phase Epitaxy (MOVPE)
50%
Hall Effect Measurement
50%
Threshold Energy
50%
Deep Centers
50%
As-grown
50%
Mg-doped GaN
50%
Low Doping Concentration
50%
Doping Efficiency
50%
Cyclopentadienone
50%
Semi-insulating
50%
Schottky Barrier Diode
50%
Optical Threshold
50%
Mg Dopant
50%
Trap Level
50%
Photocapacitance
50%
Dopant Sources
50%
Material Science
Doping (Additives)
100%
Magnesium
100%
Schottky Barrier
50%
Vapor Phase Epitaxy
50%
Film
50%