TY - JOUR
T1 - Deep level defects in polycrystalline cadmium sulfide
AU - Besomi, Paul
AU - Wessels, Bruce
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 1980
Y1 - 1980
N2 - Properties of deep level defects in polycrystalline CdS junctions were investigated using transient capacitance spectroscopy. A total of seven electron traps and one hole trap was observed with activation energies of 0.16, 0.31, 0.38, 0.42, 0.53, 0.69, 0.96, and 0.32 eV, respectively. The emission rate, capture cross section and concentration of the traps are presented. The temperature dependence of the capture cross section for the electron traps at 0.53 and 0.69 eV are also given.
AB - Properties of deep level defects in polycrystalline CdS junctions were investigated using transient capacitance spectroscopy. A total of seven electron traps and one hole trap was observed with activation energies of 0.16, 0.31, 0.38, 0.42, 0.53, 0.69, 0.96, and 0.32 eV, respectively. The emission rate, capture cross section and concentration of the traps are presented. The temperature dependence of the capture cross section for the electron traps at 0.53 and 0.69 eV are also given.
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U2 - 10.1063/1.328249
DO - 10.1063/1.328249
M3 - Article
AN - SCOPUS:0019045108
VL - 51
SP - 4305
EP - 4309
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 8
ER -