Deep level defects in polycrystalline cadmium sulfide

Paul Besomi*, Bruce Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

Properties of deep level defects in polycrystalline CdS junctions were investigated using transient capacitance spectroscopy. A total of seven electron traps and one hole trap was observed with activation energies of 0.16, 0.31, 0.38, 0.42, 0.53, 0.69, 0.96, and 0.32 eV, respectively. The emission rate, capture cross section and concentration of the traps are presented. The temperature dependence of the capture cross section for the electron traps at 0.53 and 0.69 eV are also given.

Original languageEnglish (US)
Pages (from-to)4305-4309
Number of pages5
JournalJournal of Applied Physics
Volume51
Issue number8
DOIs
StatePublished - 1980

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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