Deep level formation in undoped and oxygen-doped GaN

J. M. Gregie*, R. Y. Korotkov, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

Deep level defects in oxygen doped GaN grown by metal-organic vapor phase epitaxy were investigated. Using steady-state photocapacitance (SSPC) spectroscopy, three deep levels with optical ionization energies of 1.0, 1.4, and 3.25 eV were observed in both nominally undoped and oxygen-doped samples. The total deep level defect concentrations ranged from 6×1015 cm-3 in undoped films to 3×1016 cm-3 in oxygen-doped films. The concentration of the 3.25 eV level defect increased upon oxygen doping, while the concentration of the 1.0 and 1.4 eV levels were essentially dopant independent. From the measured concentrations the formation energies of the defects were calculated and compared to energies calculated using density functional theory.

Original languageEnglish (US)
Pages (from-to)G11.56.1-G11.56.6
JournalMaterials Research Society Symposium - Proceedings
Volume639
StatePublished - Dec 1 2001
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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