Deep level transient spectroscopy of interface and bulk trap states in InP metal/oxide/semiconductor structures

Masahide Inuishi; Bruce W. Wessels

doi:10.1016/0040-6090(83)90431-5

Deep level transient spectroscopy of interface and bulk trap states in InP metal/oxide/semiconductor structures

Masahide Inuishi^*, Bruce W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Deep level defect states in InP metal/oxide/semiconductor (MOS) diode structures prepared from n-type vapor phase epitaxial material were determined by transient capacitance spectroscopy. In unannealed MOS diodes a total of three bulk traps were observed with energies of E_c-0.44, E_c-0.53 and E_c-0.80 eV. The interface state density was found to be continuous in the range of E_c-0.14 eV≤E^*≤E_c-0.44 eV and increased toward the midgap. The capture cross section prefactor of the interface states was of the order of 10^-16 cm² and was independent of energy in the energy range from E_c-0.30 to E_c-0.44 eV.

Original language	English (US)
Pages (from-to)	141-153
Number of pages	13
Journal	Thin Solid Films
Volume	103
Issue number	1-3
DOIs	https://doi.org/10.1016/0040-6090(83)90431-5
State	Published - 1983

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(83)90431-5

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@article{00da2f67064c427d8946931f264e8b56,

title = "Deep level transient spectroscopy of interface and bulk trap states in InP metal/oxide/semiconductor structures",

abstract = "Deep level defect states in InP metal/oxide/semiconductor (MOS) diode structures prepared from n-type vapor phase epitaxial material were determined by transient capacitance spectroscopy. In unannealed MOS diodes a total of three bulk traps were observed with energies of Ec-0.44, Ec-0.53 and Ec-0.80 eV. The interface state density was found to be continuous in the range of Ec-0.14 eV≤E*≤Ec-0.44 eV and increased toward the midgap. The capture cross section prefactor of the interface states was of the order of 10-16 cm2 and was independent of energy in the energy range from Ec-0.30 to Ec-0.44 eV.",

author = "Masahide Inuishi and Wessels, {Bruce W.}",

note = "Funding Information: This work was partially supportedb y the National Science Foundation-MaterialsR esearchL aboratoryP rogramt hrought heM aterialsR esearchC entero f NorthwesterUn niversity(G rantD MR79-23573a) nd the National ScienceF ound-ation CeramicsP rogram( GrantDMR81-03324). The authors are gratefult o D. Manchon of Bell Laboratoriefsor providing substratme aterial.",

year = "1983",

doi = "10.1016/0040-6090(83)90431-5",

language = "English (US)",

volume = "103",

pages = "141--153",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-3",

}

TY - JOUR

T1 - Deep level transient spectroscopy of interface and bulk trap states in InP metal/oxide/semiconductor structures

AU - Inuishi, Masahide

AU - Wessels, Bruce W.

N1 - Funding Information: This work was partially supportedb y the National Science Foundation-MaterialsR esearchL aboratoryP rogramt hrought heM aterialsR esearchC entero f NorthwesterUn niversity(G rantD MR79-23573a) nd the National ScienceF ound-ation CeramicsP rogram( GrantDMR81-03324). The authors are gratefult o D. Manchon of Bell Laboratoriefsor providing substratme aterial.

PY - 1983

Y1 - 1983

N2 - Deep level defect states in InP metal/oxide/semiconductor (MOS) diode structures prepared from n-type vapor phase epitaxial material were determined by transient capacitance spectroscopy. In unannealed MOS diodes a total of three bulk traps were observed with energies of Ec-0.44, Ec-0.53 and Ec-0.80 eV. The interface state density was found to be continuous in the range of Ec-0.14 eV≤E*≤Ec-0.44 eV and increased toward the midgap. The capture cross section prefactor of the interface states was of the order of 10-16 cm2 and was independent of energy in the energy range from Ec-0.30 to Ec-0.44 eV.

AB - Deep level defect states in InP metal/oxide/semiconductor (MOS) diode structures prepared from n-type vapor phase epitaxial material were determined by transient capacitance spectroscopy. In unannealed MOS diodes a total of three bulk traps were observed with energies of Ec-0.44, Ec-0.53 and Ec-0.80 eV. The interface state density was found to be continuous in the range of Ec-0.14 eV≤E*≤Ec-0.44 eV and increased toward the midgap. The capture cross section prefactor of the interface states was of the order of 10-16 cm2 and was independent of energy in the energy range from Ec-0.30 to Ec-0.44 eV.

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UR - http://www.scopus.com/inward/citedby.url?scp=0020750564&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(83)90431-5

DO - 10.1016/0040-6090(83)90431-5

M3 - Article

AN - SCOPUS:0020750564

SN - 0040-6090

VL - 103

SP - 141

EP - 153

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-3

ER -

Deep level transient spectroscopy of interface and bulk trap states in InP metal/oxide/semiconductor structures

Abstract

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