Deep level transient spectroscopy of interface and bulk trap states in InP metal/oxide/semiconductor structures

Masahide Inuishi*, Bruce W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Deep level defect states in InP metal/oxide/semiconductor (MOS) diode structures prepared from n-type vapor phase epitaxial material were determined by transient capacitance spectroscopy. In unannealed MOS diodes a total of three bulk traps were observed with energies of Ec-0.44, Ec-0.53 and Ec-0.80 eV. The interface state density was found to be continuous in the range of Ec-0.14 eV≤E*≤Ec-0.44 eV and increased toward the midgap. The capture cross section prefactor of the interface states was of the order of 10-16 cm2 and was independent of energy in the energy range from Ec-0.30 to Ec-0.44 eV.

Original languageEnglish (US)
Pages (from-to)141-153
Number of pages13
JournalThin Solid Films
Volume103
Issue number1-3
DOIs
StatePublished - 1983

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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