Deep level transient spectroscopy of interface and bulk trap states in InP metal/oxide/semiconductor structures

INIS

• metals 100%
• interfaces 100%
• oxides 100%
• energy 66%
• traps 66%
• indium phosphides 66%
• semiconductor diodes 66%
• capture 33%
• levels 33%
• spectroscopy 33%
• range 33%
• defects 33%
• semiconductor materials 33%
• density 33%
• energy range 33%
• cross sections 33%
• vapors 33%
• epitaxy 33%
• capacitance 33%
• deep level transient spectroscopy 33%

Physics

• Metal Oxide Semiconductor 100%
• Semiconductor Diodes 66%
• Defects 33%
• Spectroscopy 33%
• Absorption Cross Sections 33%
• Capacitance 33%
• Vapor Phase 33%
• Transients 33%

Material Science

• Deep-Level Transient Spectroscopy 33%
• Semiconductor Structure 33%
• Material 33%
• Defect 33%
• Density 33%