Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia

S. W. Sun*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia were investigated by transient capacitance spectroscopy. A total of three hole traps associated with nitrogen doping was observed with activation energies of 0.21, 0.3, and 0.45 eV. The traps H(0.21) and H(0.3) are tentatively attributed to a nitrogen-impurity complex. Concentrations of deep trapping states as high as 8×1014 cm-3 were observed in the as-grown layers.

Original languageEnglish (US)
Pages (from-to)4616-4618
Number of pages3
JournalJournal of Applied Physics
Volume57
Issue number10
DOIs
StatePublished - Dec 1 1985

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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