Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia were investigated by transient capacitance spectroscopy. A total of three hole traps associated with nitrogen doping was observed with activation energies of 0.21, 0.3, and 0.45 eV. The traps H(0.21) and H(0.3) are tentatively attributed to a nitrogen-impurity complex. Concentrations of deep trapping states as high as 8×1014 cm-3 were observed in the as-grown layers.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)