Abstract
We present deep UV light-emitting diodes and photodetectors based on high Al-composition AlGaN. We have obtained very short wavelength UV LEDs (λ<255 nm) with milliwatt level optical output powers, based on an AlGaN multiple-quantum well active region. Solar-blind photodetectors have also been fabricated with quantum efficiencies in excess of 70%. Based on these photodetectors, focal plane arrays have been fabricated.
Original language | English (US) |
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Article number | 04 |
Pages (from-to) | 30-40 |
Number of pages | 11 |
Journal | Progress in Biomedical Optics and Imaging - Proceedings of SPIE |
Volume | 5729 |
DOIs | |
State | Published - 2005 |
Event | Optoelectronic Integrated Circuits VII - San Jose, CA, United States Duration: Jan 25 2005 → Jan 27 2005 |
Keywords
- AlGaN
- Focal plane arrays
- Light-emitting diode
- Solar-blind photodetector
- Ultraviolet
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Radiology Nuclear Medicine and imaging
- Biomaterials