Deep ultraviolet light-emitting diodes and photodetectors for UV communications

Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

15 Scopus citations


We present deep UV light-emitting diodes and photodetectors based on high Al-composition AlGaN. We have obtained very short wavelength UV LEDs (λ<255 nm) with milliwatt level optical output powers, based on an AlGaN multiple-quantum well active region. Solar-blind photodetectors have also been fabricated with quantum efficiencies in excess of 70%. Based on these photodetectors, focal plane arrays have been fabricated.

Original languageEnglish (US)
Article number04
Pages (from-to)30-40
Number of pages11
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
StatePublished - 2005
EventOptoelectronic Integrated Circuits VII - San Jose, CA, United States
Duration: Jan 25 2005Jan 27 2005


  • AlGaN
  • Focal plane arrays
  • Light-emitting diode
  • Solar-blind photodetector
  • Ultraviolet

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Radiology Nuclear Medicine and imaging
  • Biomaterials


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