TY - JOUR
T1 - Deep Ultraviolet Nonlinear Optical Materials
AU - Tran, T. Thao
AU - Yu, Hongwei
AU - Rondinelli, James M.
AU - Poeppelmeier, Kenneth R.
AU - Halasyamani, P. Shiv
N1 - Funding Information:
TTT, HY, and PSH thank the Welch Foundation (Grant E- 1457), the National Science Foundation (DMR-1503573), and the Texas Center for Superconductivity for support. KRP thanks the National Science Foundation (DMR-1307698) for support. JMR is supported by the National Science Foundation (NSF) through award number DMR-1454688. We also thank A.N. Halasyamani for greatly improving Figure 1).
Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/8/9
Y1 - 2016/8/9
N2 - Deep ultraviolet (absorption edge <200 nm, band gap >6.2 eV) nonlinear optical (NLO) materials are of current interest owing to their technological applications and materials design challenges. Technologically, the materials are used in laser systems, atto-second pulse generation, semiconductor manufacturing, and photolithography. Designing and synthesizing a deep UV NLO material requires crystallographic non-centrosymmetry, a wide UV transparency range, a large second-harmonic generating coefficient (dij > 0.39 pm/V), moderate birefringence (δn ∼ 0.07), chemical stability and resistance to laser damage, and ease in the growth of large high-quality single crystals. This review examines the known deep UV NLO materials with respect to their crystal structure, band gap, SHG efficiency, laser damage threshold, and birefringence. Finally, future directions with respect to new deep UV NLO materials are discussed.
AB - Deep ultraviolet (absorption edge <200 nm, band gap >6.2 eV) nonlinear optical (NLO) materials are of current interest owing to their technological applications and materials design challenges. Technologically, the materials are used in laser systems, atto-second pulse generation, semiconductor manufacturing, and photolithography. Designing and synthesizing a deep UV NLO material requires crystallographic non-centrosymmetry, a wide UV transparency range, a large second-harmonic generating coefficient (dij > 0.39 pm/V), moderate birefringence (δn ∼ 0.07), chemical stability and resistance to laser damage, and ease in the growth of large high-quality single crystals. This review examines the known deep UV NLO materials with respect to their crystal structure, band gap, SHG efficiency, laser damage threshold, and birefringence. Finally, future directions with respect to new deep UV NLO materials are discussed.
UR - http://www.scopus.com/inward/record.url?scp=84981539669&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84981539669&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.6b02366
DO - 10.1021/acs.chemmater.6b02366
M3 - Review article
AN - SCOPUS:84981539669
SN - 0897-4756
VL - 28
SP - 5238
EP - 5258
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 15
ER -