Defect centers in high purity hydride VPE indium phosphide

S. W. Sun*, A. P. Constant, C. D. Adams, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

InP vapor phase epitaxial layers with net donor concentrations in the 8×1014 to 3×1016 cm-3 range have been reproducibly grown with the In/HCl/PH3/H2 reactant system. Room temperature electron mobilities varied from 1500 to 3500 cm2/V·s. Photoluminescence measurements at 77 K indicated transitions at 1.41, 1.37 and 1.33 eV in the high purity samples. The relative photoluminescence intensity ratio I(1.41)/I(1.37) depended upon epitaxial growth conditions. In some of the VPE layers, a PL transition with a peak at 1.19 eV was observed. Deep level transient spectroscopy measurements were performed on as-grown, doped and electron irradiated VPE material. The relationship between deep level spectra and residual impurities was examined.

Original languageEnglish (US)
Pages (from-to)149-157
Number of pages9
JournalJournal of Crystal Growth
Volume64
Issue number1
DOIs
StatePublished - Nov 1 1983

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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