Defect centers in high purity hydride VPE indium phosphide

S. W. Sun; A. P. Constant; C. D. Adams; B. W. Wessels

doi:10.1016/0022-0248(83)90262-2

Defect centers in high purity hydride VPE indium phosphide

S. W. Sun^*, A. P. Constant, C. D. Adams, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

InP vapor phase epitaxial layers with net donor concentrations in the 8×10¹⁴ to 3×10¹⁶ cm^-3 range have been reproducibly grown with the In/HCl/PH₃/H₂ reactant system. Room temperature electron mobilities varied from 1500 to 3500 cm²/V·s. Photoluminescence measurements at 77 K indicated transitions at 1.41, 1.37 and 1.33 eV in the high purity samples. The relative photoluminescence intensity ratio I(1.41)/I(1.37) depended upon epitaxial growth conditions. In some of the VPE layers, a PL transition with a peak at 1.19 eV was observed. Deep level transient spectroscopy measurements were performed on as-grown, doped and electron irradiated VPE material. The relationship between deep level spectra and residual impurities was examined.

Original language	English (US)
Pages (from-to)	149-157
Number of pages	9
Journal	Journal of Crystal Growth
Volume	64
Issue number	1
DOIs	https://doi.org/10.1016/0022-0248(83)90262-2
State	Published - Nov 1 1983

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(83)90262-2

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@article{f8e0c6d59f9f42529f970a642305d0cc,

title = "Defect centers in high purity hydride VPE indium phosphide",

abstract = "InP vapor phase epitaxial layers with net donor concentrations in the 8×1014 to 3×1016 cm-3 range have been reproducibly grown with the In/HCl/PH3/H2 reactant system. Room temperature electron mobilities varied from 1500 to 3500 cm2/V·s. Photoluminescence measurements at 77 K indicated transitions at 1.41, 1.37 and 1.33 eV in the high purity samples. The relative photoluminescence intensity ratio I(1.41)/I(1.37) depended upon epitaxial growth conditions. In some of the VPE layers, a PL transition with a peak at 1.19 eV was observed. Deep level transient spectroscopy measurements were performed on as-grown, doped and electron irradiated VPE material. The relationship between deep level spectra and residual impurities was examined.",

author = "Sun, {S. W.} and Constant, {A. P.} and Adams, {C. D.} and Wessels, {B. W.}",

note = "Funding Information: This work was supported by the NSF Ceramics program under grant DMR81-03324. Optical measurements were performed in the facilities of the Materials Research Center at Norhwestern University supported in part by the NSF (DMR79-23573). The authors would like to thank Drs. D. Manchon of Bell Laboratories and G. Antypas of Crystacomm for supplying many of the InP substrates used in this study. Helpful discussions with discussions with Dr. S. B. Hyder of Varian Associates are also gratefully acknowledged.",

year = "1983",

month = nov,

day = "1",

doi = "10.1016/0022-0248(83)90262-2",

language = "English (US)",

volume = "64",

pages = "149--157",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Defect centers in high purity hydride VPE indium phosphide

AU - Sun, S. W.

AU - Constant, A. P.

AU - Adams, C. D.

AU - Wessels, B. W.

N1 - Funding Information: This work was supported by the NSF Ceramics program under grant DMR81-03324. Optical measurements were performed in the facilities of the Materials Research Center at Norhwestern University supported in part by the NSF (DMR79-23573). The authors would like to thank Drs. D. Manchon of Bell Laboratories and G. Antypas of Crystacomm for supplying many of the InP substrates used in this study. Helpful discussions with discussions with Dr. S. B. Hyder of Varian Associates are also gratefully acknowledged.

PY - 1983/11/1

Y1 - 1983/11/1

N2 - InP vapor phase epitaxial layers with net donor concentrations in the 8×1014 to 3×1016 cm-3 range have been reproducibly grown with the In/HCl/PH3/H2 reactant system. Room temperature electron mobilities varied from 1500 to 3500 cm2/V·s. Photoluminescence measurements at 77 K indicated transitions at 1.41, 1.37 and 1.33 eV in the high purity samples. The relative photoluminescence intensity ratio I(1.41)/I(1.37) depended upon epitaxial growth conditions. In some of the VPE layers, a PL transition with a peak at 1.19 eV was observed. Deep level transient spectroscopy measurements were performed on as-grown, doped and electron irradiated VPE material. The relationship between deep level spectra and residual impurities was examined.

AB - InP vapor phase epitaxial layers with net donor concentrations in the 8×1014 to 3×1016 cm-3 range have been reproducibly grown with the In/HCl/PH3/H2 reactant system. Room temperature electron mobilities varied from 1500 to 3500 cm2/V·s. Photoluminescence measurements at 77 K indicated transitions at 1.41, 1.37 and 1.33 eV in the high purity samples. The relative photoluminescence intensity ratio I(1.41)/I(1.37) depended upon epitaxial growth conditions. In some of the VPE layers, a PL transition with a peak at 1.19 eV was observed. Deep level transient spectroscopy measurements were performed on as-grown, doped and electron irradiated VPE material. The relationship between deep level spectra and residual impurities was examined.

UR - http://www.scopus.com/inward/record.url?scp=3743097837&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3743097837&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(83)90262-2

DO - 10.1016/0022-0248(83)90262-2

M3 - Article

AN - SCOPUS:3743097837

SN - 0022-0248

VL - 64

SP - 149

EP - 157

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Defect centers in high purity hydride VPE indium phosphide

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