Defect-induced perturbation on the 1/3 ML Sn-Si(111) surface: A voltage-dependent scanning tunneling microscopy study

L. Ottaviano; G. Profeta; A. Continenza; S. Santucci; A. J. Freeman; S. Modesti

doi:10.1016/S0039-6028(00)00677-4

Defect-induced perturbation on the 1/3 ML Sn-Si(111) surface: A voltage-dependent scanning tunneling microscopy study

L. Ottaviano^*, G. Profeta, A. Continenza, S. Santucci, A. J. Freeman, S. Modesti

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We have measured the amplitude of the damped periodic lattice response to substitutional Si defect sites on the 1/3 ML Sn-Si(111) surface at room temperature by means of voltage-dependent scanning tunneling microscopy experiments. This perturbation, which in the case of Si defects mainly shows up as an increased apparent height of the defect first neighbors, is strongly voltage dependent and vanishes when tunneling at very low voltages (approximately 10 mV), both in filled and empty state images. The observed energy dependence is justified by the vertical hybridization of the surface dangling bond states at the Fermi level and by vertical charge rearrangement between the Sn adatoms and the subsurface Si atoms directly below the T₄ site.

Original language	English (US)
Pages (from-to)	57-67
Number of pages	11
Journal	Surface Science
Volume	464
Issue number	2-3
DOIs	https://doi.org/10.1016/S0039-6028(00)00677-4
State	Published - Oct 1 2000

Funding

We acknowledge Marco Crivellari for support during the experiments. Work at Northwestern University supported by the US National Science Foundation (through the Northwestern University Materials Research Center).

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/S0039-6028(00)00677-4

Cite this

@article{952f4850aa87439486b17a4aa1f92630,

title = "Defect-induced perturbation on the 1/3 ML Sn-Si(111) surface: A voltage-dependent scanning tunneling microscopy study",

abstract = "We have measured the amplitude of the damped periodic lattice response to substitutional Si defect sites on the 1/3 ML Sn-Si(111) surface at room temperature by means of voltage-dependent scanning tunneling microscopy experiments. This perturbation, which in the case of Si defects mainly shows up as an increased apparent height of the defect first neighbors, is strongly voltage dependent and vanishes when tunneling at very low voltages (approximately 10 mV), both in filled and empty state images. The observed energy dependence is justified by the vertical hybridization of the surface dangling bond states at the Fermi level and by vertical charge rearrangement between the Sn adatoms and the subsurface Si atoms directly below the T4 site.",

author = "L. Ottaviano and G. Profeta and A. Continenza and S. Santucci and Freeman, {A. J.} and S. Modesti",

note = "Funding Information: We acknowledge Marco Crivellari for support during the experiments. Work at Northwestern University supported by the US National Science Foundation (through the Northwestern University Materials Research Center).",

year = "2000",

month = oct,

day = "1",

doi = "10.1016/S0039-6028(00)00677-4",

language = "English (US)",

volume = "464",

pages = "57--67",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "2-3",

}

TY - JOUR

T1 - Defect-induced perturbation on the 1/3 ML Sn-Si(111) surface

T2 - A voltage-dependent scanning tunneling microscopy study

AU - Ottaviano, L.

AU - Profeta, G.

AU - Continenza, A.

AU - Santucci, S.

AU - Freeman, A. J.

AU - Modesti, S.

N1 - Funding Information: We acknowledge Marco Crivellari for support during the experiments. Work at Northwestern University supported by the US National Science Foundation (through the Northwestern University Materials Research Center).

PY - 2000/10/1

Y1 - 2000/10/1

N2 - We have measured the amplitude of the damped periodic lattice response to substitutional Si defect sites on the 1/3 ML Sn-Si(111) surface at room temperature by means of voltage-dependent scanning tunneling microscopy experiments. This perturbation, which in the case of Si defects mainly shows up as an increased apparent height of the defect first neighbors, is strongly voltage dependent and vanishes when tunneling at very low voltages (approximately 10 mV), both in filled and empty state images. The observed energy dependence is justified by the vertical hybridization of the surface dangling bond states at the Fermi level and by vertical charge rearrangement between the Sn adatoms and the subsurface Si atoms directly below the T4 site.

AB - We have measured the amplitude of the damped periodic lattice response to substitutional Si defect sites on the 1/3 ML Sn-Si(111) surface at room temperature by means of voltage-dependent scanning tunneling microscopy experiments. This perturbation, which in the case of Si defects mainly shows up as an increased apparent height of the defect first neighbors, is strongly voltage dependent and vanishes when tunneling at very low voltages (approximately 10 mV), both in filled and empty state images. The observed energy dependence is justified by the vertical hybridization of the surface dangling bond states at the Fermi level and by vertical charge rearrangement between the Sn adatoms and the subsurface Si atoms directly below the T4 site.

UR - http://www.scopus.com/inward/record.url?scp=0034292227&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034292227&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(00)00677-4

DO - 10.1016/S0039-6028(00)00677-4

M3 - Article

AN - SCOPUS:0034292227

SN - 0039-6028

VL - 464

SP - 57

EP - 67

JO - Surface Science

JF - Surface Science

IS - 2-3

ER -

Defect-induced perturbation on the 1/3 ML Sn-Si(111) surface: A voltage-dependent scanning tunneling microscopy study

Abstract

Funding

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this