Defect structure of strontium titanate thin films

W. A. Feil*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


The electrical and optical properties of deep-level defects in SrTiO 3 thin films grown by organometallic chemical-vapor deposition were investigated. Transient photocapacitance spectroscopy was used to determine the deep-level defect structure. Metal/insulator/semiconductor diodes were used for these measurements. The dominant defects in the SrTiO3 consisted of a series of deep-level trapping states with energies in the range of E v+2.4 to Ev+3.15 eV and a series of shallower traps near the conduction-band edge. The defect concentration ranged from 1014 to 1018 cm-3 in the as-grown films.

Original languageEnglish (US)
Pages (from-to)3927-3931
Number of pages5
JournalJournal of Applied Physics
Issue number6
StatePublished - 1993

ASJC Scopus subject areas

  • General Physics and Astronomy


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