Defect structure of strontium titanate thin films

W. A. Feil; B. W. Wessels

doi:10.1063/1.354492

Defect structure of strontium titanate thin films

W. A. Feil^*, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The electrical and optical properties of deep-level defects in SrTiO ₃ thin films grown by organometallic chemical-vapor deposition were investigated. Transient photocapacitance spectroscopy was used to determine the deep-level defect structure. Metal/insulator/semiconductor diodes were used for these measurements. The dominant defects in the SrTiO₃ consisted of a series of deep-level trapping states with energies in the range of E _v+2.4 to E_v+3.15 eV and a series of shallower traps near the conduction-band edge. The defect concentration ranged from 10¹⁴ to 10¹⁸ cm^-3 in the as-grown films.

Original language	English (US)
Pages (from-to)	3927-3931
Number of pages	5
Journal	Journal of Applied Physics
Volume	74
Issue number	6
DOIs	https://doi.org/10.1063/1.354492
State	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.354492

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title = "Defect structure of strontium titanate thin films",

abstract = "The electrical and optical properties of deep-level defects in SrTiO 3 thin films grown by organometallic chemical-vapor deposition were investigated. Transient photocapacitance spectroscopy was used to determine the deep-level defect structure. Metal/insulator/semiconductor diodes were used for these measurements. The dominant defects in the SrTiO3 consisted of a series of deep-level trapping states with energies in the range of E v+2.4 to Ev+3.15 eV and a series of shallower traps near the conduction-band edge. The defect concentration ranged from 1014 to 1018 cm-3 in the as-grown films.",

author = "Feil, {W. A.} and Wessels, {B. W.}",

year = "1993",

doi = "10.1063/1.354492",

language = "English (US)",

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pages = "3927--3931",

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T1 - Defect structure of strontium titanate thin films

AU - Feil, W. A.

AU - Wessels, B. W.

PY - 1993

Y1 - 1993

N2 - The electrical and optical properties of deep-level defects in SrTiO 3 thin films grown by organometallic chemical-vapor deposition were investigated. Transient photocapacitance spectroscopy was used to determine the deep-level defect structure. Metal/insulator/semiconductor diodes were used for these measurements. The dominant defects in the SrTiO3 consisted of a series of deep-level trapping states with energies in the range of E v+2.4 to Ev+3.15 eV and a series of shallower traps near the conduction-band edge. The defect concentration ranged from 1014 to 1018 cm-3 in the as-grown films.

AB - The electrical and optical properties of deep-level defects in SrTiO 3 thin films grown by organometallic chemical-vapor deposition were investigated. Transient photocapacitance spectroscopy was used to determine the deep-level defect structure. Metal/insulator/semiconductor diodes were used for these measurements. The dominant defects in the SrTiO3 consisted of a series of deep-level trapping states with energies in the range of E v+2.4 to Ev+3.15 eV and a series of shallower traps near the conduction-band edge. The defect concentration ranged from 1014 to 1018 cm-3 in the as-grown films.

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DO - 10.1063/1.354492

M3 - Article

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

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Defect structure of strontium titanate thin films

Abstract

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