Defect structures in GaP/Si

Srikanth B. Samavedam; Eric P. Kvam; Greg Ford; Bruce W. Wessels; T. P. Chin; Jerry M. Woodall

Defect structures in GaP/Si

Srikanth B. Samavedam^*, Eric P. Kvam, Greg Ford, Bruce W. Wessels, T. P. Chin, Jerry M. Woodall

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The heteroepitaxial growth of gallium phosphide on silicon (GaP/Si) is a useful step towards integration of III-V based devices onto silicon. GaP layers grown on silicon substrates of different orientations using metallorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were characterized using transmission electron microscopy (TEM) with an attempt to understand the epilayer growth characteristics. Despite the fact that the GaP/Si system has a low misfit (≈0.4%), a high density of crystal stacking defects was commonly observed. Inversion domain boundaries (IDBs) were another common defect observed in regions where the fault density was reduced.

Original language	English (US)
Pages (from-to)	431-436
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	399
State	Published - 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Defect structures in GaP/Si",

abstract = "The heteroepitaxial growth of gallium phosphide on silicon (GaP/Si) is a useful step towards integration of III-V based devices onto silicon. GaP layers grown on silicon substrates of different orientations using metallorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were characterized using transmission electron microscopy (TEM) with an attempt to understand the epilayer growth characteristics. Despite the fact that the GaP/Si system has a low misfit (≈0.4%), a high density of crystal stacking defects was commonly observed. Inversion domain boundaries (IDBs) were another common defect observed in regions where the fault density was reduced.",

author = "Samavedam, {Srikanth B.} and Kvam, {Eric P.} and Greg Ford and Wessels, {Bruce W.} and Chin, {T. P.} and Woodall, {Jerry M.}",

year = "1996",

language = "English (US)",

volume = "399",

pages = "431--436",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

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TY - JOUR

T1 - Defect structures in GaP/Si

AU - Samavedam, Srikanth B.

AU - Kvam, Eric P.

AU - Ford, Greg

AU - Wessels, Bruce W.

AU - Chin, T. P.

AU - Woodall, Jerry M.

PY - 1996

Y1 - 1996

N2 - The heteroepitaxial growth of gallium phosphide on silicon (GaP/Si) is a useful step towards integration of III-V based devices onto silicon. GaP layers grown on silicon substrates of different orientations using metallorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were characterized using transmission electron microscopy (TEM) with an attempt to understand the epilayer growth characteristics. Despite the fact that the GaP/Si system has a low misfit (≈0.4%), a high density of crystal stacking defects was commonly observed. Inversion domain boundaries (IDBs) were another common defect observed in regions where the fault density was reduced.

AB - The heteroepitaxial growth of gallium phosphide on silicon (GaP/Si) is a useful step towards integration of III-V based devices onto silicon. GaP layers grown on silicon substrates of different orientations using metallorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were characterized using transmission electron microscopy (TEM) with an attempt to understand the epilayer growth characteristics. Despite the fact that the GaP/Si system has a low misfit (≈0.4%), a high density of crystal stacking defects was commonly observed. Inversion domain boundaries (IDBs) were another common defect observed in regions where the fault density was reduced.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029720162&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029720162

SN - 0272-9172

VL - 399

SP - 431

EP - 436

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 26 November 1995 through 1 December 1995

ER -

Defect structures in GaP/Si

Abstract

ASJC Scopus subject areas

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