Abstract
This paper describes experimental and theoretical studies of the mechanics of free-standing nanoribbons and membranes of single-crystalline silicon transfer printed onto patterned dielectric layers. The results show that analytical descriptions of the mechanics agree well with experimental data, and they explicitly reveal how the geometry of dielectric layers (i.e., the width and depth of the features of relief) and the silicon (i.e., the thickness and widths of the ribbons) affect mechanical bowing (i.e., "sagging") in the suspended regions of the silicon. This system is of practical importance in the use of semiconductor nanomaterials for electronic devices, because incomplete sagging near defects in gate dielectrics provides a level of robustness against electrical shorting in those regions which exceeds that associated with conventional deposition techniques for thin films. Field effect transistors formed using silicon nanoribbons transferred onto a range of ultrathin gate dielectrics, including patterned epoxy, organic self-assembled monolayers, and HfO2, demonstrate these concepts.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2535-2540 |
| Number of pages | 6 |
| Journal | Advanced Functional Materials |
| Volume | 18 |
| Issue number | 17 |
| DOIs | |
| State | Published - Sep 10 2008 |
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ASJC Scopus subject areas
- Biomaterials
- Electrochemistry
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
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Defect tolerance and nanomechanics in transistors that use semiconductor nanomaterials and ultrathin dielectrics. / Ahn, Jong Hyun; Zhu, Zhengtao; Park, Sang Il; Xiao, Jianliang; Huang, Yonggang; Rogers, John A.
In: Advanced Functional Materials, Vol. 18, No. 17, 10.09.2008, p. 2535-2540.Research output: Contribution to journal › Article
TY - JOUR
T1 - Defect tolerance and nanomechanics in transistors that use semiconductor nanomaterials and ultrathin dielectrics
AU - Ahn, Jong Hyun
AU - Zhu, Zhengtao
AU - Park, Sang Il
AU - Xiao, Jianliang
AU - Huang, Yonggang
AU - Rogers, John A.
PY - 2008/9/10
Y1 - 2008/9/10
N2 - This paper describes experimental and theoretical studies of the mechanics of free-standing nanoribbons and membranes of single-crystalline silicon transfer printed onto patterned dielectric layers. The results show that analytical descriptions of the mechanics agree well with experimental data, and they explicitly reveal how the geometry of dielectric layers (i.e., the width and depth of the features of relief) and the silicon (i.e., the thickness and widths of the ribbons) affect mechanical bowing (i.e., "sagging") in the suspended regions of the silicon. This system is of practical importance in the use of semiconductor nanomaterials for electronic devices, because incomplete sagging near defects in gate dielectrics provides a level of robustness against electrical shorting in those regions which exceeds that associated with conventional deposition techniques for thin films. Field effect transistors formed using silicon nanoribbons transferred onto a range of ultrathin gate dielectrics, including patterned epoxy, organic self-assembled monolayers, and HfO2, demonstrate these concepts.
AB - This paper describes experimental and theoretical studies of the mechanics of free-standing nanoribbons and membranes of single-crystalline silicon transfer printed onto patterned dielectric layers. The results show that analytical descriptions of the mechanics agree well with experimental data, and they explicitly reveal how the geometry of dielectric layers (i.e., the width and depth of the features of relief) and the silicon (i.e., the thickness and widths of the ribbons) affect mechanical bowing (i.e., "sagging") in the suspended regions of the silicon. This system is of practical importance in the use of semiconductor nanomaterials for electronic devices, because incomplete sagging near defects in gate dielectrics provides a level of robustness against electrical shorting in those regions which exceeds that associated with conventional deposition techniques for thin films. Field effect transistors formed using silicon nanoribbons transferred onto a range of ultrathin gate dielectrics, including patterned epoxy, organic self-assembled monolayers, and HfO2, demonstrate these concepts.
UR - http://www.scopus.com/inward/record.url?scp=52449124749&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=52449124749&partnerID=8YFLogxK
U2 - 10.1002/adfm.200800176
DO - 10.1002/adfm.200800176
M3 - Article
AN - SCOPUS:52449124749
VL - 18
SP - 2535
EP - 2540
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 17
ER -