INIS
dielectrics
83%
silicon
66%
nanostructures
50%
defects
33%
layers
33%
semiconductor materials
33%
mechanics
33%
nanomaterials
33%
width
33%
levels
16%
range
16%
thin films
16%
deposition
16%
electronic equipment
16%
geometry
16%
membranes
16%
tolerance
16%
depth
16%
experimental data
16%
transistors
16%
thickness
16%
field effect transistors
16%
epoxides
16%
bowing
16%
monocrystals
16%
Engineering
Silicon
100%
Nanomaterial
33%
Semiconductor Material
33%
Gate Dielectric
33%
Dielectric Layer
33%
Membrane
16%
Self-Assembled Monolayers
16%
Thin Films
16%
Transistor
16%
Theoretical Study
16%
Field-Effect Transistor
16%
Crystalline Silicon
16%
Bending (Forming)
16%
Defect Tolerance
16%
Demonstrates
16%
Electronic Devices
16%
Defects
16%
Thickness
16%
Material Science
Nanostructured Material
33%
Semiconductor Material
33%
Nanoribbon
33%
Nanomechanics
33%
Membrane
16%
Thin Films
16%
Self Assembled Monolayer
16%
Dielectric Material
16%
Epoxy
16%
Defect
16%