Defects and electronic transport in rare earth doped epitaxial SrTiO3 thin films

S. R. Gilbert; B. W. Wessels; P. W. Brazis; T. P. Hogan; C. R. Kannewurf

doi:10.1557/proc-433-21

Defects and electronic transport in rare earth doped epitaxial SrTiO₃ thin films

S. R. Gilbert^*, B. W. Wessels, P. W. Brazis, T. P. Hogan, C. R. Kannewurf

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Semiconducting, epitaxial SrTiO₃ thin films doped with Eu³⁺ donors were analyzed using transient photocapacitance spectroscopy to determine the nature of the charge compensating defects. Deep level defects were detected with optical thresholds at E_c-0.6 eV, E_c - 0.8 eV, and E_c - 2.05 eV. The level at E_c - 0.8 eV was the dominant defect in all of the films examined, with concentrations ranging from 1.6×10¹⁵ to 1.2×10¹⁷ cm^-3 that increased as the square of donor concentration. The level was attributed to the strontium vacancy.

Original language	English (US)
Pages (from-to)	21-26
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	433
DOIs	https://doi.org/10.1557/proc-433-21
State	Published - 1996
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{2b446e04271f427fbf7ccdfe8834b429,

title = "Defects and electronic transport in rare earth doped epitaxial SrTiO3 thin films",

abstract = "Semiconducting, epitaxial SrTiO3 thin films doped with Eu3+ donors were analyzed using transient photocapacitance spectroscopy to determine the nature of the charge compensating defects. Deep level defects were detected with optical thresholds at Ec-0.6 eV, Ec - 0.8 eV, and Ec - 2.05 eV. The level at Ec - 0.8 eV was the dominant defect in all of the films examined, with concentrations ranging from 1.6×1015 to 1.2×1017 cm-3 that increased as the square of donor concentration. The level was attributed to the strontium vacancy.",

author = "Gilbert, {S. R.} and Wessels, {B. W.} and Brazis, {P. W.} and Hogan, {T. P.} and Kannewurf, {C. R.}",

year = "1996",

doi = "10.1557/proc-433-21",

language = "English (US)",

volume = "433",

pages = "21--26",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

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TY - JOUR

T1 - Defects and electronic transport in rare earth doped epitaxial SrTiO3 thin films

AU - Gilbert, S. R.

AU - Wessels, B. W.

AU - Brazis, P. W.

AU - Hogan, T. P.

AU - Kannewurf, C. R.

PY - 1996

Y1 - 1996

N2 - Semiconducting, epitaxial SrTiO3 thin films doped with Eu3+ donors were analyzed using transient photocapacitance spectroscopy to determine the nature of the charge compensating defects. Deep level defects were detected with optical thresholds at Ec-0.6 eV, Ec - 0.8 eV, and Ec - 2.05 eV. The level at Ec - 0.8 eV was the dominant defect in all of the films examined, with concentrations ranging from 1.6×1015 to 1.2×1017 cm-3 that increased as the square of donor concentration. The level was attributed to the strontium vacancy.

AB - Semiconducting, epitaxial SrTiO3 thin films doped with Eu3+ donors were analyzed using transient photocapacitance spectroscopy to determine the nature of the charge compensating defects. Deep level defects were detected with optical thresholds at Ec-0.6 eV, Ec - 0.8 eV, and Ec - 2.05 eV. The level at Ec - 0.8 eV was the dominant defect in all of the films examined, with concentrations ranging from 1.6×1015 to 1.2×1017 cm-3 that increased as the square of donor concentration. The level was attributed to the strontium vacancy.

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DO - 10.1557/proc-433-21

M3 - Conference article

AN - SCOPUS:0030409442

SN - 0272-9172

VL - 433

SP - 21

EP - 26

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Defects and electronic transport in rare earth doped epitaxial SrTiO₃ thin films

Abstract

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