Defects and electronic transport in rare earth doped epitaxial SrTiO3 thin films

S. R. Gilbert*, B. W. Wessels, P. W. Brazis, T. P. Hogan, C. R. Kannewurf

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Semiconducting, epitaxial SrTiO3 thin films doped with Eu3+ donors were analyzed using transient photocapacitance spectroscopy to determine the nature of the charge compensating defects. Deep level defects were detected with optical thresholds at Ec-0.6 eV, Ec - 0.8 eV, and Ec - 2.05 eV. The level at Ec - 0.8 eV was the dominant defect in all of the films examined, with concentrations ranging from 1.6×1015 to 1.2×1017 cm-3 that increased as the square of donor concentration. The level was attributed to the strontium vacancy.

Original languageEnglish (US)
Pages (from-to)21-26
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume433
DOIs
StatePublished - Jan 1 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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