Nonintentionally doped metalorganic vapor-phase epitaxy Ga1-x InxP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance-voltage and deep- level transient spectroscopy techniques. They are found to exhibit a free-carrier concentration at room temperature of the order of 1015 cm-3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (∼ 1013 cm-3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 1014-1015 cm-3.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)