Defects in organometallic vapor-phase epitaxy-grown GaInP layers

S. L. Feng*, J. C. Bourgoin, F. Omnes, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

Nonintentionally doped metalorganic vapor-phase epitaxy Ga1-x InxP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance-voltage and deep- level transient spectroscopy techniques. They are found to exhibit a free-carrier concentration at room temperature of the order of 1015 cm-3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (∼ 1013 cm-3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 1014-1015 cm-3.

Original languageEnglish (US)
Pages (from-to)941-943
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number8
DOIs
StatePublished - Dec 1 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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