Defects in organometallic vapor-phase epitaxy-grown GaInP layers

S. L. Feng; J. C. Bourgoin; F. Omnes; M. Razeghi

doi:10.1063/1.106308

Defects in organometallic vapor-phase epitaxy-grown GaInP layers

S. L. Feng^*, J. C. Bourgoin, F. Omnes, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Nonintentionally doped metalorganic vapor-phase epitaxy Ga_1-x In_xP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance-voltage and deep- level transient spectroscopy techniques. They are found to exhibit a free-carrier concentration at room temperature of the order of 10¹⁵ cm^-3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (∼ 10¹³ cm^-3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 10¹⁴-10¹⁵ cm^-3.

Original language	English (US)
Pages (from-to)	941-943
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	8
DOIs	https://doi.org/10.1063/1.106308
State	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.106308

Cite this

@article{d369dc8541e6482ea3d46fbfed9e2e80,

title = "Defects in organometallic vapor-phase epitaxy-grown GaInP layers",

abstract = "Nonintentionally doped metalorganic vapor-phase epitaxy Ga1-x InxP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance-voltage and deep- level transient spectroscopy techniques. They are found to exhibit a free-carrier concentration at room temperature of the order of 1015 cm-3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (∼ 1013 cm-3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 1014-1015 cm-3.",

author = "Feng, {S. L.} and Bourgoin, {J. C.} and F. Omnes and M. Razeghi",

year = "1991",

doi = "10.1063/1.106308",

language = "English (US)",

volume = "59",

pages = "941--943",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Defects in organometallic vapor-phase epitaxy-grown GaInP layers

AU - Feng, S. L.

AU - Bourgoin, J. C.

AU - Omnes, F.

AU - Razeghi, M.

PY - 1991

Y1 - 1991

N2 - Nonintentionally doped metalorganic vapor-phase epitaxy Ga1-x InxP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance-voltage and deep- level transient spectroscopy techniques. They are found to exhibit a free-carrier concentration at room temperature of the order of 1015 cm-3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (∼ 1013 cm-3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 1014-1015 cm-3.

AB - Nonintentionally doped metalorganic vapor-phase epitaxy Ga1-x InxP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance-voltage and deep- level transient spectroscopy techniques. They are found to exhibit a free-carrier concentration at room temperature of the order of 1015 cm-3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (∼ 1013 cm-3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 1014-1015 cm-3.

UR - http://www.scopus.com/inward/record.url?scp=0000199620&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000199620&partnerID=8YFLogxK

U2 - 10.1063/1.106308

DO - 10.1063/1.106308

M3 - Article

AN - SCOPUS:0000199620

SN - 0003-6951

VL - 59

SP - 941

EP - 943

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Defects in organometallic vapor-phase epitaxy-grown GaInP layers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this