Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN

L. S. Vlasenko, C. Bozdog, G. D. Watkins, F. Shahedipour, Bruce W Wessels

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Irradiation of p-type (Mg-doped) GaN in situ at 4.2 K by 2.5 MeV electrons reduces the visible luminescence and creates a broad luminescence band in the infrared at ∼0.95 eV. Upon annealing at 180 K, partial recovery of the visible luminescence occurs and a well resolved S = 1 center is observed by optical detection of electron paramagnetic resonance to emerge in it. Labeled L8, its D tensor suggests a Frenkel excitonic state with the two s = 1/2 particles separated along the off-c-axis Ga-N bond direction by the Ga-N bond distance. Other centers are weakly observed in the infrared band which anneal at room temperature.

Original languageEnglish (US)
Article number205202
Pages (from-to)2052021-2052024
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number20
DOIs
StatePublished - May 15 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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