Abstract
Irradiation of p-type (Mg-doped) GaN in situ at 4.2 K by 2.5 MeV electrons reduces the visible luminescence and creates a broad luminescence band in the infrared at ∼0.95 eV. Upon annealing at 180 K, partial recovery of the visible luminescence occurs and a well resolved S = 1 center is observed by optical detection of electron paramagnetic resonance to emerge in it. Labeled L8, its D tensor suggests a Frenkel excitonic state with the two s = 1/2 particles separated along the off-c-axis Ga-N bond direction by the Ga-N bond distance. Other centers are weakly observed in the infrared band which anneal at room temperature.
| Original language | English (US) |
|---|---|
| Article number | 205202 |
| Pages (from-to) | 2052021-2052024 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 65 |
| Issue number | 20 |
| DOIs | |
| State | Published - May 15 2002 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics