Degradation of doped Si regions contacted with transition metal silicides due to metal-dopant compound formation

K. Maex*, G. Ghosh, L. Delaey, R. De Keersmaecker

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

The stability of doped Si with respect to a contacting silicide was investigated for TiSi2, VSi2, CoSi2, ZrSi2, MoSi2, TaSi2, WSi2 and PtSi on As and B doped Si, by calculation of the critical portion of the ternary diagram. From the thermodynamic calculations it is shown that high B concentrations in Si will be unstable underneath an overlaying TiSi2, TaSi2 and ZrSi2 film. In the case of As-doped Si, high concentrations in Si are unstable with respect to an overlaying TiSi2, TaSi2, ZrSi2 and PtSi film. The effect of metal dopant compound formation is not expected to occur in the case of VSi2, MoSi2, CoSi2 and probably also not for WSi2 on B-doped Si. It is also not expected to occur in the case of VSi2, CoSi2, MoSi2 and WSi2 on As-doped Si. The relevance of these thermodynamic predictions for technological applications is illustrated by experimental results on the diffusion of B and As from various implanted silicide layers. From comparison of thermodynamic characteristics of M-P compounds it shown that no advantage is expected from P over As as far as metal dopant compound formation is concerned.

Original languageEnglish (US)
Number of pages1
JournalApplied Surface Science
Volume38
Issue number1-4
DOIs
StatePublished - Jan 1 1989
EventRMS 1989: Proceedings of the European Workshop on Refractory Metals and Silicides - Houthalen, Belg
Duration: Mar 20 1989Mar 22 1989

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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