Delta-doping optimization for high quality p -type GaN

C. Bayram*, J. L. Pau, R. McClintock, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

Delta (δ-) doping is studied in order to achieve high quality p -type GaN. Atomic force microscopy, x-ray diffraction, photoluminescence, and Hall measurements are performed on the samples to optimize the δ -doping characteristics. The effect of annealing on the electrical, optical, and structural quality is also investigated for different δ -doping parameters. Optimized pulsing conditions result in layers with hole concentrations near 1018 cm-3 and superior crystal quality compared to conventional p -GaN. This material improvement is achieved thanks to the reduction in the Mg activation energy and self-compensation effects in δ -doped p -GaN.

Original languageEnglish (US)
Article number083512
JournalJournal of Applied Physics
Volume104
Issue number8
DOIs
StatePublished - Nov 7 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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