Abstract
Delta (δ-) doping is studied in order to achieve high quality p -type GaN. Atomic force microscopy, x-ray diffraction, photoluminescence, and Hall measurements are performed on the samples to optimize the δ -doping characteristics. The effect of annealing on the electrical, optical, and structural quality is also investigated for different δ -doping parameters. Optimized pulsing conditions result in layers with hole concentrations near 1018 cm-3 and superior crystal quality compared to conventional p -GaN. This material improvement is achieved thanks to the reduction in the Mg activation energy and self-compensation effects in δ -doped p -GaN.
Original language | English (US) |
---|---|
Article number | 083512 |
Journal | Journal of Applied Physics |
Volume | 104 |
Issue number | 8 |
DOIs | |
State | Published - 2008 |
Funding
The authors thank D. Hoffman from the Center for Quantum Devices for valuable support during electrical measurements. The authors also acknowledge the Fulbright Association and the Spanish Ministry of Education and Science for supporting one of the authors (J.L.P.).
ASJC Scopus subject areas
- General Physics and Astronomy