Delta-doping optimization for high quality p -type GaN

C. Bayram; J. L. Pau; R. McClintock; M. Razeghi

doi:10.1063/1.3000564

Delta-doping optimization for high quality p -type GaN

C. Bayram^*, J. L. Pau, R. McClintock, M. Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

Delta (δ-) doping is studied in order to achieve high quality p -type GaN. Atomic force microscopy, x-ray diffraction, photoluminescence, and Hall measurements are performed on the samples to optimize the δ -doping characteristics. The effect of annealing on the electrical, optical, and structural quality is also investigated for different δ -doping parameters. Optimized pulsing conditions result in layers with hole concentrations near 1018 cm-3 and superior crystal quality compared to conventional p -GaN. This material improvement is achieved thanks to the reduction in the Mg activation energy and self-compensation effects in δ -doped p -GaN.

Original language	English (US)
Article number	083512
Journal	Journal of Applied Physics
Volume	104
Issue number	8
DOIs	https://doi.org/10.1063/1.3000564
State	Published - 2008

Funding

The authors thank D. Hoffman from the Center for Quantum Devices for valuable support during electrical measurements. The authors also acknowledge the Fulbright Association and the Spanish Ministry of Education and Science for supporting one of the authors (J.L.P.).

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Delta-doping optimization for high quality p -type GaN",

abstract = "Delta (δ-) doping is studied in order to achieve high quality p -type GaN. Atomic force microscopy, x-ray diffraction, photoluminescence, and Hall measurements are performed on the samples to optimize the δ -doping characteristics. The effect of annealing on the electrical, optical, and structural quality is also investigated for different δ -doping parameters. Optimized pulsing conditions result in layers with hole concentrations near 1018 cm-3 and superior crystal quality compared to conventional p -GaN. This material improvement is achieved thanks to the reduction in the Mg activation energy and self-compensation effects in δ -doped p -GaN.",

author = "C. Bayram and Pau, \{J. L.\} and R. McClintock and M. Razeghi",

note = "Funding Information: The authors thank D. Hoffman from the Center for Quantum Devices for valuable support during electrical measurements. The authors also acknowledge the Fulbright Association and the Spanish Ministry of Education and Science for supporting one of the authors (J.L.P.).",

year = "2008",

doi = "10.1063/1.3000564",

language = "English (US)",

volume = "104",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Delta-doping optimization for high quality p -type GaN

AU - Bayram, C.

AU - Pau, J. L.

AU - McClintock, R.

AU - Razeghi, M.

N1 - Funding Information: The authors thank D. Hoffman from the Center for Quantum Devices for valuable support during electrical measurements. The authors also acknowledge the Fulbright Association and the Spanish Ministry of Education and Science for supporting one of the authors (J.L.P.).

PY - 2008

Y1 - 2008

N2 - Delta (δ-) doping is studied in order to achieve high quality p -type GaN. Atomic force microscopy, x-ray diffraction, photoluminescence, and Hall measurements are performed on the samples to optimize the δ -doping characteristics. The effect of annealing on the electrical, optical, and structural quality is also investigated for different δ -doping parameters. Optimized pulsing conditions result in layers with hole concentrations near 1018 cm-3 and superior crystal quality compared to conventional p -GaN. This material improvement is achieved thanks to the reduction in the Mg activation energy and self-compensation effects in δ -doped p -GaN.

AB - Delta (δ-) doping is studied in order to achieve high quality p -type GaN. Atomic force microscopy, x-ray diffraction, photoluminescence, and Hall measurements are performed on the samples to optimize the δ -doping characteristics. The effect of annealing on the electrical, optical, and structural quality is also investigated for different δ -doping parameters. Optimized pulsing conditions result in layers with hole concentrations near 1018 cm-3 and superior crystal quality compared to conventional p -GaN. This material improvement is achieved thanks to the reduction in the Mg activation energy and self-compensation effects in δ -doped p -GaN.

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ER -

Delta-doping optimization for high quality p -type GaN

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