Demonstration of 256 × 256 focal plane array based on Al-free GaInAs-InP QWIP

Jutao Jiang, Kan Mi, Ryan P McClintock, Manijeh Razeghi*, Gail J. Brown, Chris Jelen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

We report the first demonstration of an infrared focal plane array based on aluminum-free GalnAs-InP quantum-well infrared photodetectors (QWIPs). The long wavelength QWIP structure was grown via a low-pressure metal-organic chemical vapor deposition. Corrugated light coupling structure of QWIP was fabricated with a dry etching process. A 256 × 256 detector array was also fabricated with dry etching and hybridized to a Litton readout integrated circuit via indium bumps. A unique positive lithography method was developed to perform indium-bump liftoff. The noise equivalent differential, temperature (NE Δ T) of 29 mK was achieved at 70 K with f/2 optics.

Original languageEnglish (US)
Pages (from-to)1273-1275
Number of pages3
JournalIEEE Photonics Technology Letters
Volume15
Issue number9
DOIs
StatePublished - Sep 1 2003

Keywords

  • Arrays
  • Indium compounds
  • Infrared detectors
  • Infrared imaging
  • Lithography
  • Quantum-well devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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