Demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation in the 5-8 μm wavelength range

J. S. Wojkowski; H. Mohseni; J. D. Kim; M. Razeghi

doi:10.1117/12.344573

Demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation in the 5-8 μm wavelength range

J. S. Wojkowski^*, H. Mohseni, J. D. Kim, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We report the first demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation. The structures were grown in a solid source molecular beam epitaxy reactor on semi-insulating GaAs substrate. The material was processed to 400×400 μm mesas using standard photolithography, etching, and metalization techniques. No optical immersion or surface passivation was used. The photovoltaic detectors showed a cutoff wavelength at 8 μm at 300 K. The devices showed a high quantum efficiency of 40% at 7 μm at room temperature. A responsivity of 300 mA/W was measured at 7 μm under a reverse bias of 0.25 V at 300 K resulting in a Johnson noise limited detectivity of 2×10⁸ cmH^1/2W.

Original language	English (US)
Pages (from-to)	357-363
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3629
DOIs	https://doi.org/10.1117/12.344573
State	Published - 1999
Event	Proceedings of the 1999 Photodetectors: Materials and Devices IV - San Jose, CA, USA Duration: Jan 27 1999 → Jan 29 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation in the 5-8 μm wavelength range",

abstract = "We report the first demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation. The structures were grown in a solid source molecular beam epitaxy reactor on semi-insulating GaAs substrate. The material was processed to 400×400 μm mesas using standard photolithography, etching, and metalization techniques. No optical immersion or surface passivation was used. The photovoltaic detectors showed a cutoff wavelength at 8 μm at 300 K. The devices showed a high quantum efficiency of 40% at 7 μm at room temperature. A responsivity of 300 mA/W was measured at 7 μm under a reverse bias of 0.25 V at 300 K resulting in a Johnson noise limited detectivity of 2×108 cmH1/2W.",

author = "Wojkowski, {J. S.} and H. Mohseni and Kim, {J. D.} and M. Razeghi",

year = "1999",

doi = "10.1117/12.344573",

language = "English (US)",

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pages = "357--363",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Proceedings of the 1999 Photodetectors: Materials and Devices IV ; Conference date: 27-01-1999 Through 29-01-1999",

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AU - Wojkowski, J. S.

AU - Mohseni, H.

AU - Kim, J. D.

AU - Razeghi, M.

PY - 1999

Y1 - 1999

N2 - We report the first demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation. The structures were grown in a solid source molecular beam epitaxy reactor on semi-insulating GaAs substrate. The material was processed to 400×400 μm mesas using standard photolithography, etching, and metalization techniques. No optical immersion or surface passivation was used. The photovoltaic detectors showed a cutoff wavelength at 8 μm at 300 K. The devices showed a high quantum efficiency of 40% at 7 μm at room temperature. A responsivity of 300 mA/W was measured at 7 μm under a reverse bias of 0.25 V at 300 K resulting in a Johnson noise limited detectivity of 2×108 cmH1/2W.

AB - We report the first demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation. The structures were grown in a solid source molecular beam epitaxy reactor on semi-insulating GaAs substrate. The material was processed to 400×400 μm mesas using standard photolithography, etching, and metalization techniques. No optical immersion or surface passivation was used. The photovoltaic detectors showed a cutoff wavelength at 8 μm at 300 K. The devices showed a high quantum efficiency of 40% at 7 μm at room temperature. A responsivity of 300 mA/W was measured at 7 μm under a reverse bias of 0.25 V at 300 K resulting in a Johnson noise limited detectivity of 2×108 cmH1/2W.

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EP - 363

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Photodetectors: Materials and Devices IV

Y2 - 27 January 1999 through 29 January 1999

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Demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation in the 5-8 μm wavelength range

Abstract

ASJC Scopus subject areas

UN SDGs

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