Demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation in the 5-8 μm wavelength range

J. S. Wojkowski*, Hooman Mohseni, J. D. Kim, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We report the first demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation. The structures were grown in a solid source molecular beam epitaxy reactor on semi-insulating GaAs substrate. The material was processed to 400×400 μm mesas using standard photolithography, etching, and metalization techniques. No optical immersion or surface passivation was used. The photovoltaic detectors showed a cutoff wavelength at 8 μm at 300 K. The devices showed a high quantum efficiency of 40% at 7 μm at room temperature. A responsivity of 300 mA/W was measured at 7 μm under a reverse bias of 0.25 V at 300 K resulting in a Johnson noise limited detectivity of 2×108 cmH1/2W.

Original languageEnglish (US)
Pages (from-to)357-363
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3629
StatePublished - Jan 1 1999

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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