We report the first demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation. The structures were grown in a solid source molecular beam epitaxy reactor on semi-insulating GaAs substrate. The material was processed to 400×400 μm mesas using standard photolithography, etching, and metalization techniques. No optical immersion or surface passivation was used. The photovoltaic detectors showed a cutoff wavelength at 8 μm at 300 K. The devices showed a high quantum efficiency of 40% at 7 μm at room temperature. A responsivity of 300 mA/W was measured at 7 μm under a reverse bias of 0.25 V at 300 K resulting in a Johnson noise limited detectivity of 2×108 cmH1/2W.
|Original language||English (US)|
|Number of pages||7|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - Jan 1 1999|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics