Keyphrases
AlInAsSb
100%
Cutoff Wavelength
50%
Double Heterostructure
100%
GaAs Substrate
50%
High Quantum Efficiency
50%
InAsSb
100%
Johnson Noise
50%
Metalization
50%
Optical Immersion
50%
Optical Surface
50%
Photolithography
50%
Photovoltaic Detector
50%
Reactor
50%
Responsivity
50%
Reverse Bias
50%
Room Temperature
50%
Room Temperature Operation
100%
Semi-insulating GaAs
50%
Solid Source Molecular Beam Epitaxy
50%
Surface Passivation
50%
Wavelength Range
100%
Engineering
Cutoff Wavelength
33%
Gaas Substrate
33%
Heterojunctions
100%
Optical Lithography
33%
Passivation
33%
Photovoltaics
33%
Quantum Efficiency
33%
Responsivity
33%
Reverse Bias
33%
Room Temperature
100%
Material Science
Gallium Arsenide
50%
Heterojunction
100%
Molecular Beam Epitaxy
50%
Photovoltaics
50%
Surface Passivation
50%
Physics
Heterojunctions
100%
Molecular Beam Epitaxy
33%
Photolithography
33%
Room Temperature
100%