We report the growth and characterization of long wavelength infrared type-II InAs/InAs 1-x Sb x superlattice photodiodes with a 50% cut-off wavelength at 8.0 μm on a GaSb substrate grown by metalorganic chemical vapor deposition. At 77 K, the photodiodes exhibited a differential resistance at zero bias (R 0 A) of 8.0 Ω cm 2 and a peak responsivity of 1.26 A/W corresponding to a quantum efficiency of 21%. A specific detectivity of 5.4 × 10 10 cm Hz 1/2 /W was achieved at 7.5 μm.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)