Demonstration of long wavelength infrared type-II InAs/InAs 1-x Sb x superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition

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Abstract

We report the growth and characterization of long wavelength infrared type-II InAs/InAs 1-x Sb x superlattice photodiodes with a 50% cut-off wavelength at 8.0 μm on a GaSb substrate grown by metalorganic chemical vapor deposition. At 77 K, the photodiodes exhibited a differential resistance at zero bias (R 0 A) of 8.0 Ω cm 2 and a peak responsivity of 1.26 A/W corresponding to a quantum efficiency of 21%. A specific detectivity of 5.4 × 10 10 cm Hz 1/2 /W was achieved at 7.5 μm.

Original languageEnglish (US)
Article number241103
JournalApplied Physics Letters
Volume112
Issue number24
DOIs
StatePublished - Jun 11 2018

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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