Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition

Donghai Wu, Arash Dehzangi, Manijeh Razeghi

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11 Scopus citations

Abstract

We report design, growth, and characterization of midwavelength infrared nBn photodetectors based on a type-II InAs/InAs1-xSbx superlattice on a GaSb substrate grown by metal-organic chemical vapor deposition. An InAs/AlAs1-ySby/InAs/InAs1-xSbx superlattice design was used as the large bandgap electron barrier in the photodetectors. At 150 K, the photodetector exhibits a peak responsivity of 1.23 A/W, corresponding to a quantum efficiency of 41% at an applied bias voltage of -100 mV under front-side illumination, with a 50% cut-off wavelength of 4.6 μm. With an R × A of 356 ω cm2 and a dark current density of 1.6 × 10-4 A/cm2 under an applied bias of -100 mV at 150 K, the photodetector exhibits a specific detectivity of 1.4 × 1011 cm Hz1/2/W.

Original languageEnglish (US)
Article number061102
JournalApplied Physics Letters
Volume115
Issue number6
DOIs
StatePublished - Aug 5 2019

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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