Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate

Binh Minh Nguyen; Darin Hoffman; Edward Kwei Wei Huang; Simeon Bogdanov; Pierre Yves Delaunay; Manijeh Razeghi; Meimei Z. Tidrow

doi:10.1063/1.3148326

Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate

Binh Minh Nguyen^*, Darin Hoffman, Edward Kwei Wei Huang, Simeon Bogdanov, Pierre Yves Delaunay, Manijeh Razeghi, Meimei Z. Tidrow

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

We report the growth and characterization of type-II InAs/GaSb superlattice photodiodes grown on a GaAs substrate. Through a low nucleation temperature and a reduced growth rate, a smooth GaSb surface was obtained on the GaAs substrate with clear atomic steps and low roughness morphology. On the top of the GaSb buffer, a p+ -i- n+ type-II InAs/GaSb superlattice photodiode was grown with a designed cutoff wavelength of 4 μm. The detector exhibited a differential resistance at zero bias (R0 A) in excess of 1600 cm2 and a quantum efficiency of 36.4% at 77 K, providing a specific detectivity of 6× 1011 cm Hz /W and a background limited operating temperature of 100 K with a 300 K background. Uncooled detectors showed similar performance to those grown on GaSb substrates with a carrier lifetime of 110 ns and a detectivity of 6× 108 cm Hz /W.

Original language	English (US)
Article number	223506
Journal	Applied Physics Letters
Volume	94
Issue number	22
DOIs	https://doi.org/10.1063/1.3148326
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate",

abstract = "We report the growth and characterization of type-II InAs/GaSb superlattice photodiodes grown on a GaAs substrate. Through a low nucleation temperature and a reduced growth rate, a smooth GaSb surface was obtained on the GaAs substrate with clear atomic steps and low roughness morphology. On the top of the GaSb buffer, a p+ -i- n+ type-II InAs/GaSb superlattice photodiode was grown with a designed cutoff wavelength of 4 μm. The detector exhibited a differential resistance at zero bias (R0 A) in excess of 1600 cm2 and a quantum efficiency of 36.4% at 77 K, providing a specific detectivity of 6× 1011 cm Hz /W and a background limited operating temperature of 100 K with a 300 K background. Uncooled detectors showed similar performance to those grown on GaSb substrates with a carrier lifetime of 110 ns and a detectivity of 6× 108 cm Hz /W.",

author = "Nguyen, {Binh Minh} and Darin Hoffman and Huang, {Edward Kwei Wei} and Simeon Bogdanov and Delaunay, {Pierre Yves} and Manijeh Razeghi and Tidrow, {Meimei Z.}",

note = "Funding Information: The authors would like to acknowledge Siamak A. Pour and Paritosh Manukar for their fruitful discussions and would like to thank Dr. Monte Turner and Ms. Barbara McQuinston from the Defense Advanced Research Projects Agency (DARPA) for their support and collaboration.",

year = "2009",

doi = "10.1063/1.3148326",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

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T1 - Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate

AU - Nguyen, Binh Minh

AU - Hoffman, Darin

AU - Huang, Edward Kwei Wei

AU - Bogdanov, Simeon

AU - Delaunay, Pierre Yves

AU - Razeghi, Manijeh

AU - Tidrow, Meimei Z.

N1 - Funding Information: The authors would like to acknowledge Siamak A. Pour and Paritosh Manukar for their fruitful discussions and would like to thank Dr. Monte Turner and Ms. Barbara McQuinston from the Defense Advanced Research Projects Agency (DARPA) for their support and collaboration.

PY - 2009

Y1 - 2009

N2 - We report the growth and characterization of type-II InAs/GaSb superlattice photodiodes grown on a GaAs substrate. Through a low nucleation temperature and a reduced growth rate, a smooth GaSb surface was obtained on the GaAs substrate with clear atomic steps and low roughness morphology. On the top of the GaSb buffer, a p+ -i- n+ type-II InAs/GaSb superlattice photodiode was grown with a designed cutoff wavelength of 4 μm. The detector exhibited a differential resistance at zero bias (R0 A) in excess of 1600 cm2 and a quantum efficiency of 36.4% at 77 K, providing a specific detectivity of 6× 1011 cm Hz /W and a background limited operating temperature of 100 K with a 300 K background. Uncooled detectors showed similar performance to those grown on GaSb substrates with a carrier lifetime of 110 ns and a detectivity of 6× 108 cm Hz /W.

AB - We report the growth and characterization of type-II InAs/GaSb superlattice photodiodes grown on a GaAs substrate. Through a low nucleation temperature and a reduced growth rate, a smooth GaSb surface was obtained on the GaAs substrate with clear atomic steps and low roughness morphology. On the top of the GaSb buffer, a p+ -i- n+ type-II InAs/GaSb superlattice photodiode was grown with a designed cutoff wavelength of 4 μm. The detector exhibited a differential resistance at zero bias (R0 A) in excess of 1600 cm2 and a quantum efficiency of 36.4% at 77 K, providing a specific detectivity of 6× 1011 cm Hz /W and a background limited operating temperature of 100 K with a 300 K background. Uncooled detectors showed similar performance to those grown on GaSb substrates with a carrier lifetime of 110 ns and a detectivity of 6× 108 cm Hz /W.

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Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate

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