Demonstration of planar type-II superlattice-based photodetectors using silicon ion-implantation

Arash Dehzangi, Donghai Wu, Ryan McClintock, Jiakai Li, Alexander Jaud, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

Abstract

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2 /W.

Original languageEnglish (US)
Article number68
Pages (from-to)1-8
Number of pages8
JournalPhotonics
Volume7
Issue number3
DOIs
StatePublished - Sep 2020

Keywords

  • Implantation energy
  • Ion implantation
  • Planar structure
  • Quantum efficiency
  • Type II superlattice

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Radiology Nuclear Medicine and imaging

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