Demonstration of planar type-II superlattice-based photodetectors using silicon ion-implantation

Arash Dehzangi; Donghai Wu; Ryan P McClintock; Jiakai Li; Alexander Jaud; Manijeh Razeghi

doi:10.3390/photonics7030068

Demonstration of planar type-II superlattice-based photodetectors using silicon ion-implantation

Arash Dehzangi, Donghai Wu, Ryan P McClintock, Jiakai Li, Alexander Jaud, Manijeh Razeghi^*

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Letter › peer-review

7 Scopus citations

Abstract

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs_1−xSb_x superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10⁻⁶ A/cm², under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 10¹¹ cm·Hz^1/2 /W.

Original language	English (US)
Article number	68
Pages (from-to)	1-8
Number of pages	8
Journal	Photonics
Volume	7
Issue number	3
DOIs	https://doi.org/10.3390/photonics7030068
State	Published - Sep 2020

Funding

Funding: This material is based upon work supported by the Night Vision and Electronic Sensors Directorate under Contract No. W909MY19P0027.

Keywords

Implantation energy
Ion implantation
Planar structure
Quantum efficiency
Type II superlattice

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Instrumentation
Radiology Nuclear Medicine and imaging

Access to Document

10.3390/photonics7030068

Cite this

@article{a3b7ca38e68c4386a36d91dd273aaaa7,

title = "Demonstration of planar type-II superlattice-based photodetectors using silicon ion-implantation",

abstract = "In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2 /W.",

keywords = "Implantation energy, Ion implantation, Planar structure, Quantum efficiency, Type II superlattice",

author = "Arash Dehzangi and Donghai Wu and McClintock, {Ryan P} and Jiakai Li and Alexander Jaud and Manijeh Razeghi",

note = "Publisher Copyright: {\textcopyright} 2020 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2020",

month = sep,

doi = "10.3390/photonics7030068",

language = "English (US)",

volume = "7",

pages = "1--8",

journal = "Photonics",

issn = "2304-6732",

publisher = "MDPI AG",

number = "3",

}

TY - JOUR

T1 - Demonstration of planar type-II superlattice-based photodetectors using silicon ion-implantation

AU - Dehzangi, Arash

AU - Wu, Donghai

AU - McClintock, Ryan P

AU - Li, Jiakai

AU - Jaud, Alexander

AU - Razeghi, Manijeh

PY - 2020/9

Y1 - 2020/9

N2 - In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2 /W.

AB - In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2 /W.

KW - Implantation energy

KW - Ion implantation

KW - Planar structure

KW - Quantum efficiency

KW - Type II superlattice

UR - http://www.scopus.com/inward/record.url?scp=85097414178&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85097414178&partnerID=8YFLogxK

U2 - 10.3390/photonics7030068

DO - 10.3390/photonics7030068

M3 - Letter

AN - SCOPUS:85097414178

SN - 2304-6732

VL - 7

SP - 1

EP - 8

JO - Photonics

JF - Photonics

IS - 3

M1 - 68

ER -

Demonstration of planar type-II superlattice-based photodetectors using silicon ion-implantation

Abstract

Funding

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this