We demonstrate the feasibility of the InAs/GaSb/AlSb type-II superlattice photodiodes operating at the short wavelength infrared regime below 3 μm. An n-i-p type-II InAs/GaSb/AlSb photodiode was grown with a designed cut-off wavelength of 2 μm on a GaSb substrate. At 150 K, the photodiode exhibited a dark current density of 5.6 × 10 -8 A/cm 2 and a front-side-illuminated quantum efficiency of 40.3, providing an associated shot noise detectivity of 1.0 × 10 13 Jones. The uncooled photodiode showed a dark current density of 2.2 × 10 -3 A/cm 2 and a quantum efficiency of 41.5, resulting in a detectivity of 1.7 × 10 10 Jones.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)