Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices

A. M. Hoang; G. Chen; Abbas Haddadi; S. Abdollahi Pour; Manijeh Razeghi

doi:10.1063/1.4720094

Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices

A. M. Hoang^*, G. Chen, Abbas Haddadi, S. Abdollahi Pour, Manijeh Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Abstract

We demonstrate the feasibility of the InAs/GaSb/AlSb type-II superlattice photodiodes operating at the short wavelength infrared regime below 3 μm. An n-i-p type-II InAs/GaSb/AlSb photodiode was grown with a designed cut-off wavelength of 2 μm on a GaSb substrate. At 150 K, the photodiode exhibited a dark current density of 5.6 × 10 ^-8 A/cm ² and a front-side-illuminated quantum efficiency of 40.3, providing an associated shot noise detectivity of 1.0 × 10 ¹³ Jones. The uncooled photodiode showed a dark current density of 2.2 × 10 ^-3 A/cm ² and a quantum efficiency of 41.5, resulting in a detectivity of 1.7 × 10 ¹⁰ Jones.

Original language	English (US)
Article number	211101
Journal	Applied Physics Letters
Volume	100
Issue number	21
DOIs	https://doi.org/10.1063/1.4720094
State	Published - May 21 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices",

abstract = "We demonstrate the feasibility of the InAs/GaSb/AlSb type-II superlattice photodiodes operating at the short wavelength infrared regime below 3 μm. An n-i-p type-II InAs/GaSb/AlSb photodiode was grown with a designed cut-off wavelength of 2 μm on a GaSb substrate. At 150 K, the photodiode exhibited a dark current density of 5.6 × 10 -8 A/cm 2 and a front-side-illuminated quantum efficiency of 40.3, providing an associated shot noise detectivity of 1.0 × 10 13 Jones. The uncooled photodiode showed a dark current density of 2.2 × 10 -3 A/cm 2 and a quantum efficiency of 41.5, resulting in a detectivity of 1.7 × 10 10 Jones.",

author = "Hoang, {A. M.} and G. Chen and Abbas Haddadi and {Abdollahi Pour}, S. and Manijeh Razeghi",

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T1 - Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices

AU - Hoang, A. M.

AU - Chen, G.

AU - Haddadi, Abbas

AU - Abdollahi Pour, S.

AU - Razeghi, Manijeh

PY - 2012/5/21

Y1 - 2012/5/21

N2 - We demonstrate the feasibility of the InAs/GaSb/AlSb type-II superlattice photodiodes operating at the short wavelength infrared regime below 3 μm. An n-i-p type-II InAs/GaSb/AlSb photodiode was grown with a designed cut-off wavelength of 2 μm on a GaSb substrate. At 150 K, the photodiode exhibited a dark current density of 5.6 × 10 -8 A/cm 2 and a front-side-illuminated quantum efficiency of 40.3, providing an associated shot noise detectivity of 1.0 × 10 13 Jones. The uncooled photodiode showed a dark current density of 2.2 × 10 -3 A/cm 2 and a quantum efficiency of 41.5, resulting in a detectivity of 1.7 × 10 10 Jones.

AB - We demonstrate the feasibility of the InAs/GaSb/AlSb type-II superlattice photodiodes operating at the short wavelength infrared regime below 3 μm. An n-i-p type-II InAs/GaSb/AlSb photodiode was grown with a designed cut-off wavelength of 2 μm on a GaSb substrate. At 150 K, the photodiode exhibited a dark current density of 5.6 × 10 -8 A/cm 2 and a front-side-illuminated quantum efficiency of 40.3, providing an associated shot noise detectivity of 1.0 × 10 13 Jones. The uncooled photodiode showed a dark current density of 2.2 × 10 -3 A/cm 2 and a quantum efficiency of 41.5, resulting in a detectivity of 1.7 × 10 10 Jones.

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