Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices

A. M. Hoang*, G. Chen, Abbas Haddadi, S. Abdollahi Pour, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

82 Scopus citations

Abstract

We demonstrate the feasibility of the InAs/GaSb/AlSb type-II superlattice photodiodes operating at the short wavelength infrared regime below 3 μm. An n-i-p type-II InAs/GaSb/AlSb photodiode was grown with a designed cut-off wavelength of 2 μm on a GaSb substrate. At 150 K, the photodiode exhibited a dark current density of 5.6 × 10 -8 A/cm 2 and a front-side-illuminated quantum efficiency of 40.3, providing an associated shot noise detectivity of 1.0 × 10 13 Jones. The uncooled photodiode showed a dark current density of 2.2 × 10 -3 A/cm 2 and a quantum efficiency of 41.5, resulting in a detectivity of 1.7 × 10 10 Jones.

Original languageEnglish (US)
Article number211101
JournalApplied Physics Letters
Volume100
Issue number21
DOIs
StatePublished - May 21 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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