Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application

Guanxi Chen; Abbas Haddadi; Anh Minh Hoang; Romain Chevallier; Manijeh Razeghi

doi:10.1364/OL.40.000045

Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application

Guanxi Chen, Abbas Haddadi, Anh Minh Hoang, Romain Chevallier, Manijeh Razeghi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

An InAs/GaSb type-II superlattice-based mid-wavelength infrared (MWIR) 320 × 256 unipolar focal plane array (FPA) using pMp architecture exhibited excellent infrared image from 81 to 150 K and ∼98% operability, which illustrated the possibility for high operation temperature application. At 150 K and ?50 mV operation bias, the 27 μm pixels exhibited dark current density to be 1.2 × 10?⁵ A?cm², with 50% cutoff wavelength of 4.9 μm, quantum efficiency of 67% at peak responsivity (4.6 μm), and specific detectivity of 1.2 × 10¹² Jones. At 90 K and below, the 27 μm pixels exhibited system limited dark current density, which is below 1 × 10^?9 A?cm², and specific detectivity of 1.5 × 10¹⁴ Jones. From 81 to 100 K, the FPA showed ∼11 mK NEDT by using F/2.3 optics and a 9.69 ms integration time.

Original language	English (US)
Pages (from-to)	45-47
Number of pages	3
Journal	Optics Letters
Volume	40
Issue number	1
DOIs	https://doi.org/10.1364/OL.40.000045
State	Published - Jan 1 2015

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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@article{91d59b1713714971b10044a3e13261e7,

title = "Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application",

abstract = "An InAs/GaSb type-II superlattice-based mid-wavelength infrared (MWIR) 320 × 256 unipolar focal plane array (FPA) using pMp architecture exhibited excellent infrared image from 81 to 150 K and ∼98% operability, which illustrated the possibility for high operation temperature application. At 150 K and ?50 mV operation bias, the 27 μm pixels exhibited dark current density to be 1.2 × 10?5 A?cm2, with 50% cutoff wavelength of 4.9 μm, quantum efficiency of 67% at peak responsivity (4.6 μm), and specific detectivity of 1.2 × 1012 Jones. At 90 K and below, the 27 μm pixels exhibited system limited dark current density, which is below 1 × 10?9 A?cm2, and specific detectivity of 1.5 × 1014 Jones. From 81 to 100 K, the FPA showed ∼11 mK NEDT by using F/2.3 optics and a 9.69 ms integration time.",

author = "Guanxi Chen and Abbas Haddadi and Hoang, {Anh Minh} and Romain Chevallier and Manijeh Razeghi",

note = "Publisher Copyright: {\textcopyright} 2014 Optical Society of America.",

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T1 - Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application

AU - Chen, Guanxi

AU - Haddadi, Abbas

AU - Hoang, Anh Minh

AU - Chevallier, Romain

AU - Razeghi, Manijeh

PY - 2015/1/1

Y1 - 2015/1/1

N2 - An InAs/GaSb type-II superlattice-based mid-wavelength infrared (MWIR) 320 × 256 unipolar focal plane array (FPA) using pMp architecture exhibited excellent infrared image from 81 to 150 K and ∼98% operability, which illustrated the possibility for high operation temperature application. At 150 K and ?50 mV operation bias, the 27 μm pixels exhibited dark current density to be 1.2 × 10?5 A?cm2, with 50% cutoff wavelength of 4.9 μm, quantum efficiency of 67% at peak responsivity (4.6 μm), and specific detectivity of 1.2 × 1012 Jones. At 90 K and below, the 27 μm pixels exhibited system limited dark current density, which is below 1 × 10?9 A?cm2, and specific detectivity of 1.5 × 1014 Jones. From 81 to 100 K, the FPA showed ∼11 mK NEDT by using F/2.3 optics and a 9.69 ms integration time.

AB - An InAs/GaSb type-II superlattice-based mid-wavelength infrared (MWIR) 320 × 256 unipolar focal plane array (FPA) using pMp architecture exhibited excellent infrared image from 81 to 150 K and ∼98% operability, which illustrated the possibility for high operation temperature application. At 150 K and ?50 mV operation bias, the 27 μm pixels exhibited dark current density to be 1.2 × 10?5 A?cm2, with 50% cutoff wavelength of 4.9 μm, quantum efficiency of 67% at peak responsivity (4.6 μm), and specific detectivity of 1.2 × 1012 Jones. At 90 K and below, the 27 μm pixels exhibited system limited dark current density, which is below 1 × 10?9 A?cm2, and specific detectivity of 1.5 × 1014 Jones. From 81 to 100 K, the FPA showed ∼11 mK NEDT by using F/2.3 optics and a 9.69 ms integration time.

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Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application

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