Demonstration of Zn-Diffused Planar Long-Wavelength Infrared Photodetector Based on Type-II Superlattice Grown by MBE

Rajendra K. Saroj, Van Hoang Nguyen, Steven Boyd Slivken, Gail J. Brown, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We report on a planar long-wavelength infrared photodetector based on InAs/InAs1-xSbx type-II superlattice with zinc diffusion. The superlattice structures were grown by molecular beam epitaxy, followed by a post-growth Zinc diffusion process in a metal-organic chemical vapor deposition reactor. The planar photodetectors showed a peak responsivity of 2.18 A/W, under an applied bias of-20 mV, with a corresponding quantum efficiency of 44.5%, without any anti-reflection coating, and had a 100% cut-off wavelength of 8.5 μm at 77 K temperature. These photodetectors exhibit a specific peak detectivity of 3.0 × 1012 cm.Hz1/2/W, with a dark current density of 1.5× 10-5 A/cm2 and the differential-resistance-area product of ∼ 8.6×10-1 Ω .cm2, under an applied bias of-20 mV at 77 K. A comparative study between the planar and conventional mesa-isolated photodetectors was also carried out.

Original languageEnglish (US)
Article number4000306
JournalIEEE Journal of Quantum Electronics
Volume58
Issue number5
DOIs
StatePublished - Oct 1 2022

Funding

This work was supported by the CQD/Northwestern University through Walter P. Murphy society.

Keywords

  • Planar photodetector
  • Zinc diffusion
  • long-wavelength infrared
  • molecular beam epitaxy
  • type II superlattice

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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