Demonstration of Zn-Diffused Planar Long-Wavelength Infrared Photodetector Based on Type-II Superlattice Grown by MBE

Rajendra K. Saroj; Van Hoang Nguyen; Steven Boyd Slivken; Gail J. Brown; Manijeh Razeghi

doi:10.1109/JQE.2022.3172772

Demonstration of Zn-Diffused Planar Long-Wavelength Infrared Photodetector Based on Type-II Superlattice Grown by MBE

Rajendra K. Saroj, Van Hoang Nguyen, Steven Boyd Slivken, Gail J. Brown, Manijeh Razeghi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report on a planar long-wavelength infrared photodetector based on InAs/InAs1-xSbx type-II superlattice with zinc diffusion. The superlattice structures were grown by molecular beam epitaxy, followed by a post-growth Zinc diffusion process in a metal-organic chemical vapor deposition reactor. The planar photodetectors showed a peak responsivity of 2.18 A/W, under an applied bias of-20 mV, with a corresponding quantum efficiency of 44.5%, without any anti-reflection coating, and had a 100% cut-off wavelength of 8.5 μm at 77 K temperature. These photodetectors exhibit a specific peak detectivity of 3.0 × 1012 cm.Hz1/2/W, with a dark current density of 1.5× 10-5 A/cm2 and the differential-resistance-area product of ∼ 8.6×10-1 Ω .cm2, under an applied bias of-20 mV at 77 K. A comparative study between the planar and conventional mesa-isolated photodetectors was also carried out.

Original language	English (US)
Article number	4000306
Journal	IEEE Journal of Quantum Electronics
Volume	58
Issue number	5
DOIs	https://doi.org/10.1109/JQE.2022.3172772
State	Published - Oct 1 2022

Funding

This work was supported by the CQD/Northwestern University through Walter P. Murphy society.

Keywords

Planar photodetector
Zinc diffusion
long-wavelength infrared
molecular beam epitaxy
type II superlattice

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2022.3172772

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@article{7d774a55677f45f1913d7c4b37de3d68,

title = "Demonstration of Zn-Diffused Planar Long-Wavelength Infrared Photodetector Based on Type-II Superlattice Grown by MBE",

abstract = "We report on a planar long-wavelength infrared photodetector based on InAs/InAs1-xSbx type-II superlattice with zinc diffusion. The superlattice structures were grown by molecular beam epitaxy, followed by a post-growth Zinc diffusion process in a metal-organic chemical vapor deposition reactor. The planar photodetectors showed a peak responsivity of 2.18 A/W, under an applied bias of-20 mV, with a corresponding quantum efficiency of 44.5%, without any anti-reflection coating, and had a 100% cut-off wavelength of 8.5 μm at 77 K temperature. These photodetectors exhibit a specific peak detectivity of 3.0 × 1012 cm.Hz1/2/W, with a dark current density of 1.5× 10-5 A/cm2 and the differential-resistance-area product of ∼ 8.6×10-1 Ω .cm2, under an applied bias of-20 mV at 77 K. A comparative study between the planar and conventional mesa-isolated photodetectors was also carried out.",

keywords = "Planar photodetector, Zinc diffusion, long-wavelength infrared, molecular beam epitaxy, type II superlattice",

author = "Saroj, {Rajendra K.} and Nguyen, {Van Hoang} and Slivken, {Steven Boyd} and Brown, {Gail J.} and Manijeh Razeghi",

note = "Publisher Copyright: {\textcopyright} 1965-2012 IEEE.",

year = "2022",

month = oct,

day = "1",

doi = "10.1109/JQE.2022.3172772",

language = "English (US)",

volume = "58",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Demonstration of Zn-Diffused Planar Long-Wavelength Infrared Photodetector Based on Type-II Superlattice Grown by MBE

AU - Saroj, Rajendra K.

AU - Nguyen, Van Hoang

AU - Slivken, Steven Boyd

AU - Brown, Gail J.

AU - Razeghi, Manijeh

PY - 2022/10/1

Y1 - 2022/10/1

N2 - We report on a planar long-wavelength infrared photodetector based on InAs/InAs1-xSbx type-II superlattice with zinc diffusion. The superlattice structures were grown by molecular beam epitaxy, followed by a post-growth Zinc diffusion process in a metal-organic chemical vapor deposition reactor. The planar photodetectors showed a peak responsivity of 2.18 A/W, under an applied bias of-20 mV, with a corresponding quantum efficiency of 44.5%, without any anti-reflection coating, and had a 100% cut-off wavelength of 8.5 μm at 77 K temperature. These photodetectors exhibit a specific peak detectivity of 3.0 × 1012 cm.Hz1/2/W, with a dark current density of 1.5× 10-5 A/cm2 and the differential-resistance-area product of ∼ 8.6×10-1 Ω .cm2, under an applied bias of-20 mV at 77 K. A comparative study between the planar and conventional mesa-isolated photodetectors was also carried out.

AB - We report on a planar long-wavelength infrared photodetector based on InAs/InAs1-xSbx type-II superlattice with zinc diffusion. The superlattice structures were grown by molecular beam epitaxy, followed by a post-growth Zinc diffusion process in a metal-organic chemical vapor deposition reactor. The planar photodetectors showed a peak responsivity of 2.18 A/W, under an applied bias of-20 mV, with a corresponding quantum efficiency of 44.5%, without any anti-reflection coating, and had a 100% cut-off wavelength of 8.5 μm at 77 K temperature. These photodetectors exhibit a specific peak detectivity of 3.0 × 1012 cm.Hz1/2/W, with a dark current density of 1.5× 10-5 A/cm2 and the differential-resistance-area product of ∼ 8.6×10-1 Ω .cm2, under an applied bias of-20 mV at 77 K. A comparative study between the planar and conventional mesa-isolated photodetectors was also carried out.

KW - Planar photodetector

KW - Zinc diffusion

KW - long-wavelength infrared

KW - molecular beam epitaxy

KW - type II superlattice

UR - http://www.scopus.com/inward/record.url?scp=85129657545&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85129657545&partnerID=8YFLogxK

U2 - 10.1109/JQE.2022.3172772

DO - 10.1109/JQE.2022.3172772

M3 - Article

AN - SCOPUS:85129657545

SN - 0018-9197

VL - 58

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 5

M1 - 4000306

ER -

Demonstration of Zn-Diffused Planar Long-Wavelength Infrared Photodetector Based on Type-II Superlattice Grown by MBE

Abstract

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