Dependence of interfacial excess on the threshold value of the isoconcentration surface

Kevin E. Yoon, Ronald D. Noebe, Olof C. Hellman, David N. Seidman*

*Corresponding author for this work

Research output: Contribution to journalArticle

44 Scopus citations

Abstract

The proximity histogram (or proxigram for short) is used for analyzing data collected by a three-dimensional atom probe microscope. The interfacial excess of Re (2.41 ± 0.68 atoms nm-2) is calculated by employing a proxigram in a completely geometrically independent way for γ/ γ′ interfaces in René N6, a third-generation single-crystal Ni-based superalloy. A possible dependence of interfacial excess on the variation of the threshold value of an isoconcentration surface is investigated using the data collected for René N6 alloy. It is demonstrated that the dependence of the interfacial excess value on the threshold value of the isoconcentration surface is weak.

Original languageEnglish (US)
Pages (from-to)594-597
Number of pages4
JournalSurface and Interface Analysis
Volume36
Issue number5-6 SPEC. ISS.
DOIs
StatePublished - 2004

Keywords

  • Heterophase interface
  • Interfacial segregation
  • Ni-based superalloy
  • Three-dimensional atom probe microscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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