Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors

Farhad Larki*, Arash Dehzangi, Sawal Hamid Md Ali, Azman Jalar, Md Shabiul Islam, Burhanuddin Y. Majlis, Elias B. Saion, Mohd Nizar Hamidon, Sabar D. Hutagalung

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The variation of electrical characteristics with nano size air gap variation between gates and channel of a pinch off lateral gate transistor were investigated using 3D Technology Computer Aided Design. It is found that smaller nanosize gaps which can be formed by approaching the lateral gates to the channel can improve the switching performance of the device significantly. Devices with different air gap demonstrate same on state current and maximum transconductance of 0.05 μS, however the on/off current ratio (ION/IOFF) is varied by three orders of magnitude. The parameters such as electric field and band energy variation are investigated in order to explain the variation of electrical characteristics by air gap variation.

Original languageEnglish (US)
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages170-173
Number of pages4
ISBN (Electronic)9781479957606
DOIs
StatePublished - Oct 10 2014
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur, Malaysia
Duration: Aug 27 2014Aug 29 2014

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CountryMalaysia
CityKuala Lumpur
Period8/27/148/29/14

Keywords

  • Air Gap
  • Junctionless Transistor (JLT)
  • Lateral gate (LG)
  • TCAD Simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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