Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors

Farhad Larki; Arash Dehzangi; Sawal Hamid Md Ali; Azman Jalar; Md Shabiul Islam; Burhanuddin Y. Majlis; Elias B. Saion; Mohd Nizar Hamidon; Sabar D. Hutagalung

doi:10.1109/SMELEC.2014.6920823

Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors

Farhad Larki^*, Arash Dehzangi, Sawal Hamid Md Ali, Azman Jalar, Md Shabiul Islam, Burhanuddin Y. Majlis, Elias B. Saion, Mohd Nizar Hamidon, Sabar D. Hutagalung

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The variation of electrical characteristics with nano size air gap variation between gates and channel of a pinch off lateral gate transistor were investigated using 3D Technology Computer Aided Design. It is found that smaller nanosize gaps which can be formed by approaching the lateral gates to the channel can improve the switching performance of the device significantly. Devices with different air gap demonstrate same on state current and maximum transconductance of 0.05 μS, however the on/off current ratio (I_ON/I_OFF) is varied by three orders of magnitude. The parameters such as electric field and band energy variation are investigated in order to explain the variation of electrical characteristics by air gap variation.

Original language	English (US)
Title of host publication	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	170-173
Number of pages	4
ISBN (Electronic)	9781479957606
DOIs	https://doi.org/10.1109/SMELEC.2014.6920823
State	Published - Oct 10 2014
Event	11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur, Malaysia Duration: Aug 27 2014 → Aug 29 2014

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other	11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
Country	Malaysia
City	Kuala Lumpur
Period	8/27/14 → 8/29/14

Keywords

Air Gap
Junctionless Transistor (JLT)
Lateral gate (LG)
TCAD Simulation

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/SMELEC.2014.6920823

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Larki, F., Dehzangi, A., Ali, S. H. M., Jalar, A., Islam, M. S., Majlis, B. Y., Saion, E. B., Hamidon, M. N., & Hutagalung, S. D. (2014). Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 170-173). [6920823] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2014.6920823

Larki, Farhad ; Dehzangi, Arash ; Ali, Sawal Hamid Md ; Jalar, Azman ; Islam, Md Shabiul ; Majlis, Burhanuddin Y. ; Saion, Elias B. ; Hamidon, Mohd Nizar ; Hutagalung, Sabar D. / Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 170-173 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

@inproceedings{c74ca8821bb64553896ad7d36cadb365,

title = "Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors",

abstract = "The variation of electrical characteristics with nano size air gap variation between gates and channel of a pinch off lateral gate transistor were investigated using 3D Technology Computer Aided Design. It is found that smaller nanosize gaps which can be formed by approaching the lateral gates to the channel can improve the switching performance of the device significantly. Devices with different air gap demonstrate same on state current and maximum transconductance of 0.05 μS, however the on/off current ratio (ION/IOFF) is varied by three orders of magnitude. The parameters such as electric field and band energy variation are investigated in order to explain the variation of electrical characteristics by air gap variation.",

keywords = "Air Gap, Junctionless Transistor (JLT), Lateral gate (LG), TCAD Simulation",

author = "Farhad Larki and Arash Dehzangi and Ali, {Sawal Hamid Md} and Azman Jalar and Islam, {Md Shabiul} and Majlis, {Burhanuddin Y.} and Saion, {Elias B.} and Hamidon, {Mohd Nizar} and Hutagalung, {Sabar D.}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.; 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 ; Conference date: 27-08-2014 Through 29-08-2014",

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day = "10",

doi = "10.1109/SMELEC.2014.6920823",

language = "English (US)",

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Larki, F, Dehzangi, A, Ali, SHM, Jalar, A, Islam, MS, Majlis, BY, Saion, EB, Hamidon, MN & Hutagalung, SD 2014, Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 6920823, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, Institute of Electrical and Electronics Engineers Inc., pp. 170-173, 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, Kuala Lumpur, Malaysia, 8/27/14. https://doi.org/10.1109/SMELEC.2014.6920823

Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors. / Larki, Farhad; Dehzangi, Arash; Ali, Sawal Hamid Md; Jalar, Azman; Islam, Md Shabiul; Majlis, Burhanuddin Y.; Saion, Elias B.; Hamidon, Mohd Nizar; Hutagalung, Sabar D.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. p. 170-173 6920823 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Larki, Farhad

AU - Dehzangi, Arash

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AU - Jalar, Azman

AU - Islam, Md Shabiul

AU - Majlis, Burhanuddin Y.

AU - Saion, Elias B.

AU - Hamidon, Mohd Nizar

AU - Hutagalung, Sabar D.

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N2 - The variation of electrical characteristics with nano size air gap variation between gates and channel of a pinch off lateral gate transistor were investigated using 3D Technology Computer Aided Design. It is found that smaller nanosize gaps which can be formed by approaching the lateral gates to the channel can improve the switching performance of the device significantly. Devices with different air gap demonstrate same on state current and maximum transconductance of 0.05 μS, however the on/off current ratio (ION/IOFF) is varied by three orders of magnitude. The parameters such as electric field and band energy variation are investigated in order to explain the variation of electrical characteristics by air gap variation.

AB - The variation of electrical characteristics with nano size air gap variation between gates and channel of a pinch off lateral gate transistor were investigated using 3D Technology Computer Aided Design. It is found that smaller nanosize gaps which can be formed by approaching the lateral gates to the channel can improve the switching performance of the device significantly. Devices with different air gap demonstrate same on state current and maximum transconductance of 0.05 μS, however the on/off current ratio (ION/IOFF) is varied by three orders of magnitude. The parameters such as electric field and band energy variation are investigated in order to explain the variation of electrical characteristics by air gap variation.

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KW - Junctionless Transistor (JLT)

KW - Lateral gate (LG)

KW - TCAD Simulation

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Larki F, Dehzangi A, Ali SHM, Jalar A, Islam MS, Majlis BY et al. Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc. 2014. p. 170-173. 6920823. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2014.6920823