A plasma-enhanced organometallic chemical vapor deposition process is reported for the preparation of YBa2Cu3O7-x thin films using two differing rf plasma coupling configurations. For films grown under a direct plasma glow, the YBa2Cu3O7-x phase is not produced in the asdeposited state. However, when plasma-activated nitrous oxide is used as the reactant gas in a downstream reactor configuration, superconducting YBa2Cu3O7-x films are formed in situ at a substrate temperature of 610°C. Such films have a low carbon content and a mirror-like surface which is free of voids. These preliminary results indicate that the low temperature fabrication of high-Tc superconducting oxide films by plasma-enhanced organometallic chemical vapor deposition is feasible.
|Original language||English (US)|
|Number of pages||4|
|Journal||Solid State Communications|
|State||Published - Jun 1990|
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry