Design and characterization of 1.1 micron pixel image sensor with high near infrared quantum efficiency

Zach M. Beiley; Andras Pattantyus-Abraham; Erin Hanelt; Bo Chen; Andrey Kuznetsov; Naveen Kolli; Edward H. Sargent

doi:10.1117/12.2253192

Design and characterization of 1.1 micron pixel image sensor with high near infrared quantum efficiency

Zach M. Beiley, Andras Pattantyus-Abraham, Erin Hanelt, Bo Chen, Andrey Kuznetsov, Naveen Kolli, Edward H. Sargent

Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

At the 940 nm wavelength, solar background irradiance is relatively low and device-mounted monochromatic LED emission can be used to illuminate and assess the shape, distance, and optical properties of objects. We report here NIR imaging that outperforms existing CMOS sensors by achieving record 42% quantum efficiency at 940 nm for a 1.1 μm pixel. The rationally engineered material properties of QuantumFilm allow tuning of the spectral response to the desired wavelength to achieve quantum efficiency that exceeds 40%. In addition, the combination of high QE with QuantumFilm's distinctive film-based electronic global shutter mechanism allows for extremely low illumination power and therefore lowers time-averaged system power when imaging with active illumination.

Original language	English (US)
Title of host publication	Optical Components and Materials XIV
Editors	Michel J. F. Digonnet, Shibin Jiang
Publisher	SPIE
ISBN (Electronic)	9781510606418
DOIs	https://doi.org/10.1117/12.2253192
State	Published - 2017
Event	Optical Components and Materials XIV - San Francisco, United States Duration: Jan 30 2017 → Feb 1 2017

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10100
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Optical Components and Materials XIV
Country/Territory	United States
City	San Francisco
Period	1/30/17 → 2/1/17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.2253192

Cite this

Beiley, Z. M., Pattantyus-Abraham, A., Hanelt, E., Chen, B., Kuznetsov, A., Kolli, N., & Sargent, E. H. (2017). Design and characterization of 1.1 micron pixel image sensor with high near infrared quantum efficiency. In M. J. F. Digonnet, & S. Jiang (Eds.), Optical Components and Materials XIV [101001B] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10100). SPIE. https://doi.org/10.1117/12.2253192

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title = "Design and characterization of 1.1 micron pixel image sensor with high near infrared quantum efficiency",

abstract = "At the 940 nm wavelength, solar background irradiance is relatively low and device-mounted monochromatic LED emission can be used to illuminate and assess the shape, distance, and optical properties of objects. We report here NIR imaging that outperforms existing CMOS sensors by achieving record 42% quantum efficiency at 940 nm for a 1.1 μm pixel. The rationally engineered material properties of QuantumFilm allow tuning of the spectral response to the desired wavelength to achieve quantum efficiency that exceeds 40%. In addition, the combination of high QE with QuantumFilm's distinctive film-based electronic global shutter mechanism allows for extremely low illumination power and therefore lowers time-averaged system power when imaging with active illumination.",

author = "Beiley, {Zach M.} and Andras Pattantyus-Abraham and Erin Hanelt and Bo Chen and Andrey Kuznetsov and Naveen Kolli and Sargent, {Edward H.}",

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year = "2017",

doi = "10.1117/12.2253192",

language = "English (US)",

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Beiley, ZM, Pattantyus-Abraham, A, Hanelt, E, Chen, B, Kuznetsov, A, Kolli, N & Sargent, EH 2017, Design and characterization of 1.1 micron pixel image sensor with high near infrared quantum efficiency. in MJF Digonnet & S Jiang (eds), Optical Components and Materials XIV., 101001B, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10100, SPIE, Optical Components and Materials XIV, San Francisco, United States, 1/30/17. https://doi.org/10.1117/12.2253192

Design and characterization of 1.1 micron pixel image sensor with high near infrared quantum efficiency. / Beiley, Zach M.; Pattantyus-Abraham, Andras; Hanelt, Erin et al.
Optical Components and Materials XIV. ed. / Michel J. F. Digonnet; Shibin Jiang. SPIE, 2017. 101001B (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10100).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Design and characterization of 1.1 micron pixel image sensor with high near infrared quantum efficiency

AU - Beiley, Zach M.

AU - Pattantyus-Abraham, Andras

AU - Hanelt, Erin

AU - Chen, Bo

AU - Kuznetsov, Andrey

AU - Kolli, Naveen

AU - Sargent, Edward H.

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N2 - At the 940 nm wavelength, solar background irradiance is relatively low and device-mounted monochromatic LED emission can be used to illuminate and assess the shape, distance, and optical properties of objects. We report here NIR imaging that outperforms existing CMOS sensors by achieving record 42% quantum efficiency at 940 nm for a 1.1 μm pixel. The rationally engineered material properties of QuantumFilm allow tuning of the spectral response to the desired wavelength to achieve quantum efficiency that exceeds 40%. In addition, the combination of high QE with QuantumFilm's distinctive film-based electronic global shutter mechanism allows for extremely low illumination power and therefore lowers time-averaged system power when imaging with active illumination.

AB - At the 940 nm wavelength, solar background irradiance is relatively low and device-mounted monochromatic LED emission can be used to illuminate and assess the shape, distance, and optical properties of objects. We report here NIR imaging that outperforms existing CMOS sensors by achieving record 42% quantum efficiency at 940 nm for a 1.1 μm pixel. The rationally engineered material properties of QuantumFilm allow tuning of the spectral response to the desired wavelength to achieve quantum efficiency that exceeds 40%. In addition, the combination of high QE with QuantumFilm's distinctive film-based electronic global shutter mechanism allows for extremely low illumination power and therefore lowers time-averaged system power when imaging with active illumination.

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Beiley ZM, Pattantyus-Abraham A, Hanelt E, Chen B, Kuznetsov A, Kolli N et al. Design and characterization of 1.1 micron pixel image sensor with high near infrared quantum efficiency. In Digonnet MJF, Jiang S, editors, Optical Components and Materials XIV. SPIE. 2017. 101001B. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2253192

Design and characterization of 1.1 micron pixel image sensor with high near infrared quantum efficiency

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