Design and characterization of 1.1 micron pixel image sensor with high near infrared quantum efficiency

Zach M. Beiley, Andras Pattantyus-Abraham, Erin Hanelt, Bo Chen, Andrey Kuznetsov, Naveen Kolli, Edward H. Sargent

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


At the 940 nm wavelength, solar background irradiance is relatively low and device-mounted monochromatic LED emission can be used to illuminate and assess the shape, distance, and optical properties of objects. We report here NIR imaging that outperforms existing CMOS sensors by achieving record 42% quantum efficiency at 940 nm for a 1.1 μm pixel. The rationally engineered material properties of QuantumFilm allow tuning of the spectral response to the desired wavelength to achieve quantum efficiency that exceeds 40%. In addition, the combination of high QE with QuantumFilm's distinctive film-based electronic global shutter mechanism allows for extremely low illumination power and therefore lowers time-averaged system power when imaging with active illumination.

Original languageEnglish (US)
Title of host publicationOptical Components and Materials XIV
EditorsMichel J. F. Digonnet, Shibin Jiang
ISBN (Electronic)9781510606418
StatePublished - 2017
EventOptical Components and Materials XIV - San Francisco, United States
Duration: Jan 30 2017Feb 1 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceOptical Components and Materials XIV
Country/TerritoryUnited States
CitySan Francisco

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Design and characterization of 1.1 micron pixel image sensor with high near infrared quantum efficiency'. Together they form a unique fingerprint.

Cite this