Deep level defects in high-conductivity ZnSe have been observed with optical deep level transient spectroscopy. An electron trap and hole trap with energy levels at Ec -0.33 and Ev +0.71 eV, respectively, were detected in the as-grown material. Trap concentrations were in the range of 0.4-2.0×1015 cm-3. For zinc annealed samples, a trap at Ev +0.21 eV was also observed in concentrations as high as 9×1015 cm- 3. The chemical identity of the hole traps remain undetermined, but experimental evidence indicates they may involve native defects.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Applied Physics|
|State||Published - Dec 1 1983|
ASJC Scopus subject areas
- Physics and Astronomy(all)