Detection of traps in high conductivity ZnSe by optical transient capacitance spectroscopy

K. A. Christianson*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Deep level defects in high-conductivity ZnSe have been observed with optical deep level transient spectroscopy. An electron trap and hole trap with energy levels at Ec -0.33 and Ev +0.71 eV, respectively, were detected in the as-grown material. Trap concentrations were in the range of 0.4-2.0×1015 cm-3. For zinc annealed samples, a trap at Ev +0.21 eV was also observed in concentrations as high as 9×1015 cm- 3. The chemical identity of the hole traps remain undetermined, but experimental evidence indicates they may involve native defects.

Original languageEnglish (US)
Pages (from-to)4205-4208
Number of pages4
JournalJournal of Applied Physics
Volume54
Issue number7
DOIs
StatePublished - Dec 1 1983

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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