Detection of traps in high conductivity ZnSe by optical transient capacitance spectroscopy

K. A. Christianson; B. W. Wessels

doi:10.1063/1.332516

Detection of traps in high conductivity ZnSe by optical transient capacitance spectroscopy

K. A. Christianson^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Deep level defects in high-conductivity ZnSe have been observed with optical deep level transient spectroscopy. An electron trap and hole trap with energy levels at E_c -0.33 and E_v +0.71 eV, respectively, were detected in the as-grown material. Trap concentrations were in the range of 0.4-2.0×10¹⁵ cm^-3. For zinc annealed samples, a trap at E_v +0.21 eV was also observed in concentrations as high as 9×10¹⁵ cm^- ³. The chemical identity of the hole traps remain undetermined, but experimental evidence indicates they may involve native defects.

Original language	English (US)
Pages (from-to)	4205-4208
Number of pages	4
Journal	Journal of Applied Physics
Volume	54
Issue number	7
DOIs	https://doi.org/10.1063/1.332516
State	Published - 1983

ASJC Scopus subject areas

General Physics and Astronomy

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@article{e0f827e7716b4fa0936429c42491af20,

title = "Detection of traps in high conductivity ZnSe by optical transient capacitance spectroscopy",

abstract = "Deep level defects in high-conductivity ZnSe have been observed with optical deep level transient spectroscopy. An electron trap and hole trap with energy levels at Ec -0.33 and Ev +0.71 eV, respectively, were detected in the as-grown material. Trap concentrations were in the range of 0.4-2.0×1015 cm-3. For zinc annealed samples, a trap at Ev +0.21 eV was also observed in concentrations as high as 9×1015 cm- 3. The chemical identity of the hole traps remain undetermined, but experimental evidence indicates they may involve native defects.",

author = "Christianson, {K. A.} and Wessels, {B. W.}",

year = "1983",

doi = "10.1063/1.332516",

language = "English (US)",

volume = "54",

pages = "4205--4208",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Detection of traps in high conductivity ZnSe by optical transient capacitance spectroscopy

AU - Christianson, K. A.

AU - Wessels, B. W.

PY - 1983

Y1 - 1983

N2 - Deep level defects in high-conductivity ZnSe have been observed with optical deep level transient spectroscopy. An electron trap and hole trap with energy levels at Ec -0.33 and Ev +0.71 eV, respectively, were detected in the as-grown material. Trap concentrations were in the range of 0.4-2.0×1015 cm-3. For zinc annealed samples, a trap at Ev +0.21 eV was also observed in concentrations as high as 9×1015 cm- 3. The chemical identity of the hole traps remain undetermined, but experimental evidence indicates they may involve native defects.

AB - Deep level defects in high-conductivity ZnSe have been observed with optical deep level transient spectroscopy. An electron trap and hole trap with energy levels at Ec -0.33 and Ev +0.71 eV, respectively, were detected in the as-grown material. Trap concentrations were in the range of 0.4-2.0×1015 cm-3. For zinc annealed samples, a trap at Ev +0.21 eV was also observed in concentrations as high as 9×1015 cm- 3. The chemical identity of the hole traps remain undetermined, but experimental evidence indicates they may involve native defects.

UR - http://www.scopus.com/inward/record.url?scp=0020782836&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020782836&partnerID=8YFLogxK

U2 - 10.1063/1.332516

DO - 10.1063/1.332516

M3 - Article

AN - SCOPUS:0020782836

SN - 0021-8979

VL - 54

SP - 4205

EP - 4208

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Detection of traps in high conductivity ZnSe by optical transient capacitance spectroscopy

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