Determination of concentrations and ionization energies of imperfections in degenerate InSb films

G. Bajor; S. A. Barnett; R. E. Klinger; J. E. Greene

doi:10.1016/0040-6090(79)90292-X

Determination of concentrations and ionization energies of imperfections in degenerate InSb films

G. Bajor^*, S. A. Barnett, R. E. Klinger, J. E. Greene

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A model is presented for analyzing the results of temperature dependent carrier concentration measurements in degenerate n-type InSb in order to determine the concentration and ionization energies of both shallow and deep trap states. Experimental data on evaporated InSb films as well as from our own sputter- deposited InSb films were fitted very well with the present model. In both cases the results indicated two deep trap levels at energies of 0.025 and 0.085 eV below the conduction band as well as a net concentration of shallow donors with ionization energies less than 0.001 eV. The concentrations of these levels varied with film growth conditions.

Original language	English (US)
Pages (from-to)	183-192
Number of pages	10
Journal	Thin Solid Films
Volume	59
Issue number	2
DOIs	https://doi.org/10.1016/0040-6090(79)90292-X
State	Published - May 1 1979

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(79)90292-X

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title = "Determination of concentrations and ionization energies of imperfections in degenerate InSb films",

abstract = "A model is presented for analyzing the results of temperature dependent carrier concentration measurements in degenerate n-type InSb in order to determine the concentration and ionization energies of both shallow and deep trap states. Experimental data on evaporated InSb films as well as from our own sputter- deposited InSb films were fitted very well with the present model. In both cases the results indicated two deep trap levels at energies of 0.025 and 0.085 eV below the conduction band as well as a net concentration of shallow donors with ionization energies less than 0.001 eV. The concentrations of these levels varied with film growth conditions.",

author = "G. Bajor and Barnett, {S. A.} and Klinger, {R. E.} and Greene, {J. E.}",

note = "Funding Information: The authorsg ratefullay cknowledgteh ef inanciasl upporot f the Joint Services ElectronicsP rogram( U.S. Army, U.S. Navy and U.S. Air Force)u nderC ontract DAAB-07-72-C-0259d uring the course of this work as well as the fellowship providedb y the InternationalR esearcha nd ExchangesB oard for G. Bajor.",

year = "1979",

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doi = "10.1016/0040-6090(79)90292-X",

language = "English (US)",

volume = "59",

pages = "183--192",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Determination of concentrations and ionization energies of imperfections in degenerate InSb films

AU - Bajor, G.

AU - Barnett, S. A.

AU - Klinger, R. E.

AU - Greene, J. E.

N1 - Funding Information: The authorsg ratefullay cknowledgteh ef inanciasl upporot f the Joint Services ElectronicsP rogram( U.S. Army, U.S. Navy and U.S. Air Force)u nderC ontract DAAB-07-72-C-0259d uring the course of this work as well as the fellowship providedb y the InternationalR esearcha nd ExchangesB oard for G. Bajor.

PY - 1979/5/1

Y1 - 1979/5/1

N2 - A model is presented for analyzing the results of temperature dependent carrier concentration measurements in degenerate n-type InSb in order to determine the concentration and ionization energies of both shallow and deep trap states. Experimental data on evaporated InSb films as well as from our own sputter- deposited InSb films were fitted very well with the present model. In both cases the results indicated two deep trap levels at energies of 0.025 and 0.085 eV below the conduction band as well as a net concentration of shallow donors with ionization energies less than 0.001 eV. The concentrations of these levels varied with film growth conditions.

AB - A model is presented for analyzing the results of temperature dependent carrier concentration measurements in degenerate n-type InSb in order to determine the concentration and ionization energies of both shallow and deep trap states. Experimental data on evaporated InSb films as well as from our own sputter- deposited InSb films were fitted very well with the present model. In both cases the results indicated two deep trap levels at energies of 0.025 and 0.085 eV below the conduction band as well as a net concentration of shallow donors with ionization energies less than 0.001 eV. The concentrations of these levels varied with film growth conditions.

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U2 - 10.1016/0040-6090(79)90292-X

DO - 10.1016/0040-6090(79)90292-X

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SN - 0040-6090

VL - 59

SP - 183

EP - 192

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

ER -

Determination of concentrations and ionization energies of imperfections in degenerate InSb films

Abstract

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