Determination of deep levels in Cu-doped GaP using transient-current spectroscopy

Bruce W. Wessels*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

71 Scopus citations


A method of determining deep levels in semiconductor junctions by observation of the temperature dependence of transient-current decay is described and applied to Cu-doped GaP. It is shown that the important deep-level parameters including trap energy, capture cross section, concentration, and recombination rate can be obtained. For Cu-doped GaP, several trapping levels were observed with energies of 0.50, 0.60, and 0.82 eV. Capture cross sections of these levels were of the order of 1×10-16 cm2.

Original languageEnglish (US)
Pages (from-to)1131-1133
Number of pages3
JournalJournal of Applied Physics
Issue number3
StatePublished - 1976

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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