Determination of deep levels in Cu-doped GaP using transient-current spectroscopy

Bruce W. Wessels

doi:10.1063/1.322695

Determination of deep levels in Cu-doped GaP using transient-current spectroscopy

Bruce W. Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

A method of determining deep levels in semiconductor junctions by observation of the temperature dependence of transient-current decay is described and applied to Cu-doped GaP. It is shown that the important deep-level parameters including trap energy, capture cross section, concentration, and recombination rate can be obtained. For Cu-doped GaP, several trapping levels were observed with energies of 0.50, 0.60, and 0.82 eV. Capture cross sections of these levels were of the order of 1×10^-16 cm².

Original language	English (US)
Pages (from-to)	1131-1133
Number of pages	3
Journal	Journal of Applied Physics
Volume	47
Issue number	3
DOIs	https://doi.org/10.1063/1.322695
State	Published - 1976

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Determination of deep levels in Cu-doped GaP using transient-current spectroscopy",

abstract = "A method of determining deep levels in semiconductor junctions by observation of the temperature dependence of transient-current decay is described and applied to Cu-doped GaP. It is shown that the important deep-level parameters including trap energy, capture cross section, concentration, and recombination rate can be obtained. For Cu-doped GaP, several trapping levels were observed with energies of 0.50, 0.60, and 0.82 eV. Capture cross sections of these levels were of the order of 1×10-16 cm2.",

author = "Wessels, {Bruce W.}",

year = "1976",

doi = "10.1063/1.322695",

language = "English (US)",

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T1 - Determination of deep levels in Cu-doped GaP using transient-current spectroscopy

AU - Wessels, Bruce W.

PY - 1976

Y1 - 1976

N2 - A method of determining deep levels in semiconductor junctions by observation of the temperature dependence of transient-current decay is described and applied to Cu-doped GaP. It is shown that the important deep-level parameters including trap energy, capture cross section, concentration, and recombination rate can be obtained. For Cu-doped GaP, several trapping levels were observed with energies of 0.50, 0.60, and 0.82 eV. Capture cross sections of these levels were of the order of 1×10-16 cm2.

AB - A method of determining deep levels in semiconductor junctions by observation of the temperature dependence of transient-current decay is described and applied to Cu-doped GaP. It is shown that the important deep-level parameters including trap energy, capture cross section, concentration, and recombination rate can be obtained. For Cu-doped GaP, several trapping levels were observed with energies of 0.50, 0.60, and 0.82 eV. Capture cross sections of these levels were of the order of 1×10-16 cm2.

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IS - 3

ER -

Determination of deep levels in Cu-doped GaP using transient-current spectroscopy

Abstract

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