Determination of the band-gap energy of Al1-xInxN grown by metal-organic chemical-vapor deposition

K. S. Kim; A. Saxler; P. Kung; M. Razeghi; K. Y. Lim

doi:10.1063/1.119650

Determination of the band-gap energy of Al_1-xIn_xN grown by metal-organic chemical-vapor deposition

K. S. Kim^*, A. Saxler, P. Kung, M. Razeghi, K. Y. Lim

^*Corresponding author for this work

Electrical and Computer Engineering

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119 Scopus citations

Abstract

Ternary AlInN was grown by metal-organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of Al_0.92In_0.08N is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed.

Original language	English (US)
Pages (from-to)	800-802
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	6
DOIs	https://doi.org/10.1063/1.119650
State	Published - Aug 11 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Determination of the band-gap energy of Al1-xInxN grown by metal-organic chemical-vapor deposition",

abstract = "Ternary AlInN was grown by metal-organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of Al0.92In0.08N is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed.",

author = "Kim, {K. S.} and A. Saxler and P. Kung and M. Razeghi and Lim, {K. Y.}",

note = "Funding Information: We acknowledge support from the UK Science and Engineering Research Council and thank the",

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T1 - Determination of the band-gap energy of Al1-xInxN grown by metal-organic chemical-vapor deposition

AU - Kim, K. S.

AU - Saxler, A.

AU - Kung, P.

AU - Razeghi, M.

AU - Lim, K. Y.

N1 - Funding Information: We acknowledge support from the UK Science and Engineering Research Council and thank the

PY - 1997/8/11

Y1 - 1997/8/11

N2 - Ternary AlInN was grown by metal-organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of Al0.92In0.08N is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed.

AB - Ternary AlInN was grown by metal-organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of Al0.92In0.08N is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed.

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Determination of the band-gap energy of Al_1-xIn_xN grown by metal-organic chemical-vapor deposition

Abstract

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