Determination of the band-gap energy of Al1-xInxN grown by metal-organic chemical-vapor deposition

K. S. Kim*, A. Saxler, P. Kung, M. Razeghi, K. Y. Lim

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

113 Scopus citations

Abstract

Ternary AlInN was grown by metal-organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of Al0.92In0.08N is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed.

Original languageEnglish (US)
Pages (from-to)800-802
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number6
DOIs
StatePublished - Aug 11 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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