Ternary AlInN was grown by metal-organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of Al0.92In0.08N is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Aug 11 1997|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)