Determination of the isothermal nucleation and growth parameters for the crystallization of thin Ge 2Sb 2Te 5 films

G. Ruitenberg; A. K. Petford-Long; R. C. Doole

doi:10.1063/1.1503166

Determination of the isothermal nucleation and growth parameters for the crystallization of thin Ge ₂Sb ₂Te ₅ films

G. Ruitenberg^*, A. K. Petford-Long, R. C. Doole

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

167 Scopus citations

Abstract

The isothermal crystallization of thin amorphous Ge ₂Sb ₂Te ₅ films, sandwiched between Si ₃N ₄ dielectric layers, was followed in real time using in situ transmission electron microscopy. A temperature-dependent incubation time is observed. After this incubation time, the crystallization is found to follow Johnson-Mehl-Avrami-Kolmogorov (JMAK) transformation kinetics. The JMAK parameters were determined, as well as the individual nucleation and growth parameters. The relationships between the JMAK parameters and the nucleation and growth parameters were tested and found to be valid. Nucleation was found to occur at the interfaces with the dielectric layers. The average grain size after crystallization did not show appreciable temperature dependence in the temperature range investigated.

Original language	English (US)
Pages (from-to)	3116-3123
Number of pages	8
Journal	Journal of Applied Physics
Volume	92
Issue number	6
DOIs	https://doi.org/10.1063/1.1503166
State	Published - Sep 15 2002

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Determination of the isothermal nucleation and growth parameters for the crystallization of thin Ge 2Sb 2Te 5 films",

abstract = "The isothermal crystallization of thin amorphous Ge 2Sb 2Te 5 films, sandwiched between Si 3N 4 dielectric layers, was followed in real time using in situ transmission electron microscopy. A temperature-dependent incubation time is observed. After this incubation time, the crystallization is found to follow Johnson-Mehl-Avrami-Kolmogorov (JMAK) transformation kinetics. The JMAK parameters were determined, as well as the individual nucleation and growth parameters. The relationships between the JMAK parameters and the nucleation and growth parameters were tested and found to be valid. Nucleation was found to occur at the interfaces with the dielectric layers. The average grain size after crystallization did not show appreciable temperature dependence in the temperature range investigated.",

author = "G. Ruitenberg and Petford-Long, {A. K.} and Doole, {R. C.}",

year = "2002",

month = sep,

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doi = "10.1063/1.1503166",

language = "English (US)",

volume = "92",

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journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Determination of the isothermal nucleation and growth parameters for the crystallization of thin Ge 2Sb 2Te 5 films

AU - Ruitenberg, G.

AU - Petford-Long, A. K.

AU - Doole, R. C.

PY - 2002/9/15

Y1 - 2002/9/15

N2 - The isothermal crystallization of thin amorphous Ge 2Sb 2Te 5 films, sandwiched between Si 3N 4 dielectric layers, was followed in real time using in situ transmission electron microscopy. A temperature-dependent incubation time is observed. After this incubation time, the crystallization is found to follow Johnson-Mehl-Avrami-Kolmogorov (JMAK) transformation kinetics. The JMAK parameters were determined, as well as the individual nucleation and growth parameters. The relationships between the JMAK parameters and the nucleation and growth parameters were tested and found to be valid. Nucleation was found to occur at the interfaces with the dielectric layers. The average grain size after crystallization did not show appreciable temperature dependence in the temperature range investigated.

AB - The isothermal crystallization of thin amorphous Ge 2Sb 2Te 5 films, sandwiched between Si 3N 4 dielectric layers, was followed in real time using in situ transmission electron microscopy. A temperature-dependent incubation time is observed. After this incubation time, the crystallization is found to follow Johnson-Mehl-Avrami-Kolmogorov (JMAK) transformation kinetics. The JMAK parameters were determined, as well as the individual nucleation and growth parameters. The relationships between the JMAK parameters and the nucleation and growth parameters were tested and found to be valid. Nucleation was found to occur at the interfaces with the dielectric layers. The average grain size after crystallization did not show appreciable temperature dependence in the temperature range investigated.

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DO - 10.1063/1.1503166

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JF - Journal of Applied Physics

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ER -

Determination of the isothermal nucleation and growth parameters for the crystallization of thin Ge ₂Sb ₂Te ₅ films

Abstract

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