Determination of the optical constants of zinc oxide thin films by spectroscopic ellipsometry

P. L. Washington; H. C. Ong; J. Y. Dai; R. P.H. Chang

doi:10.1063/1.121617

Determination of the optical constants of zinc oxide thin films by spectroscopic ellipsometry

P. L. Washington^*, H. C. Ong, J. Y. Dai, R. P.H. Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

176 Scopus citations

Abstract

Spectroscopic ellipsometry (SE) has been used to determine the complex pseudo dielectric functions, ε₁(E)+iε₂(E), of ZnO films on (0001) Al₂O₃ substrates over the spectral range of 1.33 and 4.96 eV at room temperature. The SE measurements are carried out with E⊥c at angles of incidence of 60° and 65° with respect to the surface normal. Below the band gap, the refractive index n is found to follow the first order Sellmeir dispersion relationship n²(λ)=1+1.881λ²/(λ ²-0.0538²). A free excitonic structure located at the band edge of 3.32 eV is clearly observed in the pseudo absorption spectrum. Elliott expression with Lorentzian broadening is used to model the pseudo absorption coefficient above the band edge.

Original language	English (US)
Pages (from-to)	3261-3263
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	25
DOIs	https://doi.org/10.1063/1.121617
State	Published - 1998

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{b7032408b0a3462eaec63f6b9a5ce2d3,

title = "Determination of the optical constants of zinc oxide thin films by spectroscopic ellipsometry",

abstract = "Spectroscopic ellipsometry (SE) has been used to determine the complex pseudo dielectric functions, ε1(E)+iε2(E), of ZnO films on (0001) Al2O3 substrates over the spectral range of 1.33 and 4.96 eV at room temperature. The SE measurements are carried out with E⊥c at angles of incidence of 60° and 65° with respect to the surface normal. Below the band gap, the refractive index n is found to follow the first order Sellmeir dispersion relationship n2(λ)=1+1.881λ2/(λ 2-0.05382). A free excitonic structure located at the band edge of 3.32 eV is clearly observed in the pseudo absorption spectrum. Elliott expression with Lorentzian broadening is used to model the pseudo absorption coefficient above the band edge.",

author = "Washington, {P. L.} and Ong, {H. C.} and Dai, {J. Y.} and Chang, {R. P.H.}",

year = "1998",

doi = "10.1063/1.121617",

language = "English (US)",

volume = "72",

pages = "3261--3263",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Determination of the optical constants of zinc oxide thin films by spectroscopic ellipsometry

AU - Washington, P. L.

AU - Ong, H. C.

AU - Dai, J. Y.

AU - Chang, R. P.H.

PY - 1998

Y1 - 1998

N2 - Spectroscopic ellipsometry (SE) has been used to determine the complex pseudo dielectric functions, ε1(E)+iε2(E), of ZnO films on (0001) Al2O3 substrates over the spectral range of 1.33 and 4.96 eV at room temperature. The SE measurements are carried out with E⊥c at angles of incidence of 60° and 65° with respect to the surface normal. Below the band gap, the refractive index n is found to follow the first order Sellmeir dispersion relationship n2(λ)=1+1.881λ2/(λ 2-0.05382). A free excitonic structure located at the band edge of 3.32 eV is clearly observed in the pseudo absorption spectrum. Elliott expression with Lorentzian broadening is used to model the pseudo absorption coefficient above the band edge.

AB - Spectroscopic ellipsometry (SE) has been used to determine the complex pseudo dielectric functions, ε1(E)+iε2(E), of ZnO films on (0001) Al2O3 substrates over the spectral range of 1.33 and 4.96 eV at room temperature. The SE measurements are carried out with E⊥c at angles of incidence of 60° and 65° with respect to the surface normal. Below the band gap, the refractive index n is found to follow the first order Sellmeir dispersion relationship n2(λ)=1+1.881λ2/(λ 2-0.05382). A free excitonic structure located at the band edge of 3.32 eV is clearly observed in the pseudo absorption spectrum. Elliott expression with Lorentzian broadening is used to model the pseudo absorption coefficient above the band edge.

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JF - Applied Physics Letters

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Determination of the optical constants of zinc oxide thin films by spectroscopic ellipsometry

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